Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description

Abstract

In this work, a silicon-on-insulator (SOI) metal-oxide-silicon field-effect transistor (MOSFET) model for circuit simulation is reported, which covers also the floating-body effect induced by the additional charge generated through impact ionization. The model is based on the complete surface-potential description and solves the Poisson equation with inclusion of the impact ionization. The developed compact SOI-MOSFET model is verified to reproduce two-dimensional-device simulation results very well, and shows the characteristic potential increase at the back side of the SOI layer. The steep drain-current (I ds ) increase at high drain-voltages (V ds ), caused by the floating-body effect, is also accurately captured.

Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

“…Accurate modeling of floating-body effects is essential for predictive SOI circuit simulation. While DC floating-body effects have been modeled with reasonable success, [10][11][12][13][14][15] modeling of history effects is significantly more difficult, and reports [13][14][15] on the latter with validation are not as comprehensive. There still is a need for deeper understanding of the physics of the history dependence.…”

Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

“…Accurate modeling of the floatingbody effects is essential for predictive SOI circuit simulation. DC floating-body effects have been modeled with reasonable success [5]. From a modeling standpoint, history effects in SOI MOSFETs are similar to non-quasistatic (NQS) effects in bulk MOSFETs and can be treated in essentially the same way [6].…”