An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies

Leite, Bernardo; Kerhervé, Eric; Bégueret, Jean-Baptiste; Belot, Didier

doi:10.1109/ted.2011.2180909

Cited by 44 publications

(28 citation statements)

References 16 publications

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“…The group analyzer sweeps the frequency from 1GHz to 10GHz to measure the Z-parameters [32]. The writing converts the Zparameters to S-parameters and calculates the K, Q and value inductance.…”

Section: Comparison Of the Simulation Results And The Measurement Resmentioning

confidence: 99%

The Performance of an Integrated Transformer in a DC/DC Converter

2017

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Section: Comparison Of the Simulation Results And The Measurement Resmentioning

confidence: 99%

The Performance of an Integrated Transformer in a DC/DC Converter

2017

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“…The symmetric 2-pimodel of 1:1 vertical transformers applied in 60-GHz CMOS power amplifiers have been reported in [2]. Another 2-pi transformer model applied in mm-wave band has reported in [3]. However, both of the above models do not include the center-tap.…”

Section: Introductionmentioning

confidence: 99%

“…Section Ⅲ introduces and analyzes series branch parameters extraction of the proposed model. The measurement results and discussions are presented in section IV, and the conclusions are summarized in Section V. These capacitances consist of two parts: one is parallel-plate capacitances and the other is fringing capacitances [3].…”

Section: Introductionmentioning

confidence: 99%

Analysis and modeling of CMOS millimeter-wave M:N six-port transformers

Gao

Song

Kang

2014

2014 IEEE International Wireless Symposium (IWS 2014)

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This paper presents an modeling of on-chip M:N transformer with six-port and develops a series branch parameters extraction methodology for the proposed transformer model. These model and parameters extraction methodology are verified by measurements and full-wave electromagnetic simulation. Compared with the measurement, the proposed transformer model can accurately predict the performance of transformer from DC to the self-resonance frequency.

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“…They are abridged in Table 1 [14], [15]. Technological parameters must be cautiously measured in the enlargement of the model so that it can be legal for an amount of different processes parameters [16], [17].…”

mentioning

confidence: 99%

Modeling and Structure Optimization of Tapped Transformer

Namoune¹,

Hamid²,

Taleb

2017

IJECE

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In this paper, a simplified circuit model of the tapped transformer structure has been presented to extract the Geometric and technology parameters and offer better physical understanding. Moreover, the structure of planar transformer has been optimized by using changing the width and space of the primary coil, so as to enlarge the quality factor Q and high coupling coefficient K. To verify the results obtained by using these models, we have compared them with the results obtained by employing the MATLAB simulator. Very good agreement has been recorded for the effective primary inductance value, whereas the effective primary quality factor value has shown a somewhat larger deviation than the inductance.

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An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies

Abstract: International audienc

Cited by 44 publications

References 16 publications

The Performance of an Integrated Transformer in a DC/DC Converter

The Performance of an Integrated Transformer in a DC/DC Converter

Analysis and modeling of CMOS millimeter-wave M:N six-port transformers

Modeling and Structure Optimization of Tapped Transformer

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