Analysis and modeling of CMOS millimeter-wave M:N six-port transformers

Abstract

This paper presents an modeling of on-chip M:N transformer with six-port and develops a series branch parameters extraction methodology for the proposed transformer model. These model and parameters extraction methodology are verified by measurements and full-wave electromagnetic simulation. Compared with the measurement, the proposed transformer model can accurately predict the performance of transformer from DC to the self-resonance frequency.

A Broadband and Equivalent-Circuit Model for Millimeter-Wave On-Chip M:N Six-Port Transformers and Baluns

“…In order to describe the distributed effects of the lossy silicon substrate accurately, the conventional classic silicon substrate equivalent network, which contains three elements, oxide-substrate capacitance , substrate ohmic loss , and substrate parasitic capacitance , is applied [20], [21]. The oxide-substrate capacitance expresses the electrical coupling from windings to the top of the substrate, whereas substrate loss and parasitic capacitances represent the loss characteristics and electrical coupling of the silicon substrate.…”

“…Their extraction methods are discussed in Section III-C. The voltage and impedance of every series branch can then be expressed as (20) …”

“…Although these models can predict the performance of six-port transformers, few of them can characterize the on-chip M:N six-port transformers in the mm-wave frequency band. In [20], an equivalent-circuit model for M:N six-port transformers has been investigated. However, the magnetic coupling effects between the windings have not been taken into account for parameter extraction of the series 0018-9480 © 2015 IEEE.…”