An analysis of the photoinduced current from a finely focused light beam in planar p-n junctions and Schottky-barrier diodes

Wilson, Tony; Pester, P. D.

doi:10.1109/t-ed.1987.23120

Cited by 9 publications

(5 citation statements)

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“…It is now straightforward t o calculate the form of junction current decay if the laser beam is suddenly turned off after the steady state has been reached. The steady state beam induced signal can be readily found by letting T + rn in (33), this gives which agrees with previous time independent analyses [5]. The current decay after the beam is switched of may be written where IOn(T) is given by (33) and T now represents the time following the switching off of the beam.…”

Section: Lsupporting

confidence: 82%

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An analysis of the photocurrent induced in a semi-infinite schottky barrier by a time varying focussed laser beam

Pester

Wilson

1988

Phys. Stat. Sol. (a)

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General expressions are derived for the photocurrent induced in a semi-infinite Schottky barrier diode due t o excitation by a focussed convergent light beam. A simple repeated transform technique using the Hankel and Laplace transformations is used to solve the diffusion equation. Special cases are considered where the excitation can be described by 8-functions, step functions, and harmonic modulation of the beam. The effects of beam focusing and cases where a simpler treatment may be used are discussed. Es werden allgemeine Ausdrucke fur den Photostrom abgeleitet, der in einer halbunendlichen Schottkybarrierendiode durch Anregung mit einem fokussierten konvergenten Lichtstrahl induziert wird. Eine einfache wiederholte Transformationskinetik mit Hankel-und Laplace-Transformationen wird benutzt, um die Diffusionsgleichung zu losen. Speziell der Fall wird beobachtet, wo die Anregung durch %-Funktionen, Stufenfunktionen und harmonische Modulation des Strahls beschrieben werden kann. Die Einflusse von Strahlenfokussierung und Falle, wo eine einfachere Behandlung benutzt werden kann, werden diskutiert.

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Section: Lsupporting

confidence: 82%

“…Schematic diagram of Schottky barrier 'ohmic coniaciThe cyclindrical symmetry[5,9] of the problem suggests that it may be most easily solved by introducing the Fourier-Bessel (or Hankel) transform of n(r, z , t ) defined as m G(v, z, t ) = J n(r, z, t ) Jo(vr) r dr ,…”

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confidence: 99%

An analysis of the photocurrent induced in a semi-infinite schottky barrier by a time varying focussed laser beam

Pester

Wilson

1988

Phys. Stat. Sol. (a)

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“…Optical coordinates have also been introduced, given by where sin ϑ is the numerical aperture of the objective lens. The time-resolved PMC signals will now be found to be proportional to a volume integral over the minority carrier concentration, say N , given by The symmetry of the problem suggests that we may use the Fourier−Bessel transform of n ( r , z ) to solve the problem. , Accordingly The continuity equation now bocomes, in terms of ñ , where κ 2 = D n ν 2 + 1/τ. It is important to note that the boundary conditions that applied to n of eq 29 viz…”

Section: Model and Analysis Of The Effects Of Focusingmentioning

confidence: 99%

“…The time-resolved PMC signals will now be found to be proportional to a volume integral over the minority carrier concentration, say N, given by The symmetry of the problem suggests that we may use the Fourier-Bessel transform of n(r,z) to solve the problem. 12,13 Accordingly…”

Section: Model and Analysis Of The Effects Of Focusingmentioning

confidence: 99%

Self-Absorption and Focusing Effects in Carrier Relaxation Dynamics under Depletion Conditions

Ramakrishna

Rangarajan

1996

J. Phys. Chem.

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The effect of a one-dimensional field (1) on the self-absorption characteristics and (2) when we have a finite numerical aperture for the objective lens that focuses the laser beam on the solid are considered here. Selfabsorption, in particular its manifestation as an inner filter for the emitted signal, has been observed in luminescence experiments. Models for this effect exist and have been analyzed, but only in the absence of space charge. Using our previous results on minority carrier relaxation in the presence of a field, we obtain expressions incorporating inner filter effects. Focusing of a light beam on the sample, by an objective lens, results in a three-dimensional source and consequently a three-dimensional continuity equation to be solved for the minority carrier concentration. Assuming a one-dimensional electric field and employing FourierBessel transforms, we recast the problem of carrier relaxation and solve the same via an identity that relates it to solutions obtained in the absence of focusing effects. The inner filter effect as well as focusing introduces new time scales in the problem of carrier relaxation. The interplay between the electric field and the parameters which characterize these effects and the consequent modulation of the intensity and time scales of carrier decay signals are analyzed and discussed.

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“…Under these circumstances we can calculate the three-dimensional light intensity distribution inside the absorbing medium 1171 which is directly proportional t o g(r, z). Fortunately, our interest is only in g(0, z ) which may be written simply as [5] where go is a constant which takes into account the surface reflectivity and quantum efficiency of the material, 01 the intensity absorption coefficient, and the term in We have also introdnced normalised co-ordinates where L is the minority carrier diffusion length given by L = ~' D T .…”

Section: (3)mentioning

confidence: 99%

Time-dependent information depth in optical probing of semiconductor materials and devices

Pester

Wilson

1988

Phys. Stat. Sol. (a)

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The interaction is considered of a time varying focused light beam with a semi‐infinite semiconductor. The volume which the photogenerated carriers probe as a function of time after the light beam is switched on is considered by introducing an information depth within which the majority of the carriers are generated. The effects are discussed of surface recombination velocity and absorption on the information depth and applications considered to both, optical beam induced current and photoluminescence studies.

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An analysis of the photoinduced current from a finely focused light beam in planar p-n junctions and Schottky-barrier diodes

Cited by 9 publications

References 0 publications

An analysis of the photocurrent induced in a semi-infinite schottky barrier by a time varying focussed laser beam

An analysis of the photocurrent induced in a semi-infinite schottky barrier by a time varying focussed laser beam

Self-Absorption and Focusing Effects in Carrier Relaxation Dynamics under Depletion Conditions

Time-dependent information depth in optical probing of semiconductor materials and devices

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