An analysis of the difference in behavior of top and bottom contact organic thin film transistors using device simulation

Gupta, Dipti; Katiyar, Monica; Gupta, Deepak

doi:10.1016/j.orgel.2009.03.012

Cited by 152 publications

(83 citation statements)

References 38 publications

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“…The standard equations and method of solution for DD models are described in detail by Selberherr [26], and is implemented in many commercial finite-element simulation packages. Such commercial packages are particularly useful to examine complex 2-dimensional device geometries such as OTFTs [96][97][98][99], however, careful consideration and tuning is required to describe charge transport in OSCs rather than inorganic semiconductors [100]. Here we focus on three major considerations when using DD models for OSCs, namely charge generation and recombination, charge transport across a heterojunction, and heterogeneous current flow.…”

Section: 1mentioning

confidence: 99%

Simulating charge transport in organic semiconductors and devices: a review

Groves

2016

Rep. Prog. Phys.

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractCharge transport simulation can be a valuable tool to better understand, optimise and design organic transistors (OTFTs), organic photovoltaics (OPVs), and light-emitting diodes (OLEDs). This review presents an overview of common charge transport and device models; namely drift-diffusion, master equation, mesoscale kinetic Monte Carlo and quantum chemical Monte Carlo, and a discussion of the relative merits of each. This is followed by a review of the application of these models as applied to charge transport in organic semiconductors and devices, highlighting in particular the insights made possible by modelling. The review concludes with an outlook for charge transport modelling in organic electronics.

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Section: 1mentioning

confidence: 99%

Simulating charge transport in organic semiconductors and devices: a review

Groves

2016

Rep. Prog. Phys.

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“…In OTFTs, there is a common issue of difference in device performance of OTFTs fabricated in top contact and bottom contact device configurations (Gundlach et al, 2006;Gupta et al 2009;Roichman et al, 2002;. The process difference between the two device designs is that in top contact OTFT, semiconductor is deposited prior to depositing source and drain electrodes, while this is vice versa in bottom contact OTFT.…”

Section: Effect Of Device Design Of Otftmentioning

confidence: 99%

“…Pentacene films with thicknesses of 50 nm are deposited by thermal evaporation at the rate of 0.03-0.04 nm/sec at substrate temperature of 65 o C. The channel length (L) for both top and bottom contact devices is 30 μm and their widths (W) are 1mm and 3.6mm, respectively. The experimentally obtained data in the output curves were also corrected in order to remove the effects of gate leakage and contact resistances (Gupta et al, 2009). To correct for the gate leakage, half of the gate current is added to the obtained drain current at each gate voltage.…”

Section: Effect Of Device Design Of Otftmentioning

confidence: 99%

“…In traditional electronics, device modelling and simulation has proven to be of great help in not only understanding the detailed device operation but has also served as a powerful tool to design and improve devices. The physics based device simulation is also becoming beneficial to the research area of organic and metal oxide semiconductors TFTs, where it is effectively predicting the device behaviour, giving insight into the underlying microscopic mechanisms and providing intuitive information about the performance of a new material (Bolognesi, 2002;Gupta et al, , 2009Gupta et al, , 2010Hill, 2007;Hossain, 2003;Scheinert, 2004). Its continued involvement for explaining various device phenomenons will certainly be of great use for future developments.…”

Section: Introductionmentioning

confidence: 99%

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Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors

Gupta¹,

Nayak²,

Yoo³

et al. 2011

Numerical Simulations of Physical and Engineering Processes

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“…In general, top contact OTFTs have lower contact resistance than bottom contact OTFTs [39]. However, bottom contact OTFTs have better compatibility for large scale integration [40]; therefore, bottom contact OTFT devices with low contact resistance must be developed.…”

Section: Introductionmentioning

confidence: 99%

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

et al. 2010

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The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional driftdiffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 k cm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 k cm, which is about half of the experimentally extracted 108 k cm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 µm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz.

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An analysis of the difference in behavior of top and bottom contact organic thin film transistors using device simulation

Cited by 152 publications

References 38 publications

Simulating charge transport in organic semiconductors and devices: a review

Simulating charge transport in organic semiconductors and devices: a review

Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

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