An Aluminum Nitride on Silicon resonant MEMS accelerometer operating in ambient pressure

Chao, Ming Yu; Ali, Abid; Ghosh, Sagnik; Lee, Joshua

doi:10.1109/transducers.2017.7994122

Cited by 15 publications

(8 citation statements)

References 8 publications

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“…In the passive portion, the piezoelectric layer is replaced by a nonpiezoelectric layer (SiO 2 ), which insulates the electrode and substrate layers. The active portion is placed close to both ends of a tine and constitutes 3/5 of the total length so that the piezoelectric transduction efficiency of the target mode is maximized [ 19 ]. In both DETF and TETF resonators under investigation, two-port configuration is adopted, which enables one tine for actuation and the other(s) for sensing.…”

Section: Theoretical Modelmentioning

confidence: 99%

Highly Sensitive Temperature Sensor Based on Coupled-Beam AlN-on-Si MEMS Resonators Operating in Out-of-Plane Flexural Vibration Modes

Yang

Zhang³

et al. 2022

Research

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This paper reports a type of highly sensitive temperature sensor utilizing AlN-on-Si resonators with coupled-beam structures of double- and triple-ended-tuning-fork (D/TETF). For both resonators, the out-of-plane flexural mode is adopted as it favors the effect of thermal mismatch between the composite layers inherent to the AlN-on-Si structure and thus helps attain a large temperature coefficient of resonant frequency (TCF). The analytical model to calculate TCF values of D/TETF AlN-on-Si resonators is provided, which agrees well with the finite-element simulation and experimental results. The resonant temperature sensor is built by closing the loop of the AlN-on-Si resonator, a transimpedance amplifier, a low-pass filter, and a phase shifter to form an oscillator, the output frequency of which shifts proportionally to the ambient temperature. The measured sensitivities of the temperature sensors using D/TETF resonators are better than -1000 ppm/°C in the temperature range of 25°C~60°C, showing great potential to fulfill the on-chip temperature compensation scheme for cofabricated sensors.

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Section: Theoretical Modelmentioning

confidence: 99%

Highly Sensitive Temperature Sensor Based on Coupled-Beam AlN-on-Si MEMS Resonators Operating in Out-of-Plane Flexural Vibration Modes

Yang

Zhang³

et al. 2022

Research

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show abstract

“…The MEMS accelerometer is developing towards further reduction in size, high resolution, high sensitivity, and high stability. High-performance piezoelectric MEMS accelerometers are widely used in various fields: condition monitoring systems [ 2 , 3 , 4 ], electronic stability control and airbags in the automotive industry [ 5 ], sensors in smart electronic products [ 6 ], flight detection [ 7 , 8 ], seismometers for earthquake monitoring [ 9 ], Internet of Things [ 3 , 10 ], etc.…”

Section: Introductionmentioning

confidence: 99%

A Miniaturized Piezoelectric MEMS Accelerometer with Polygon Topological Cantilever Structure

Yang

Lü

et al. 2022

Micromachines

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This work proposes a miniaturized piezoelectric MEMS accelerometer based on polygonal topology with an area of only 868 × 833 μm2. The device consists of six trapezoidal cantilever beams with shorter fixed sides. Meanwhile, a device with larger fixed sides is also designed for comparison. The theoretical and finite element models are established to analyze the effect of the beam′s effective stiffness on the output voltage and natural frequency. As the stiffness of the device decreases, the natural frequency of the device decreases while the output signal increases. The proposed polygonal topology with shorter fixed sides has higher voltage sensitivity than the larger fixed one based on finite element simulations. The piezoelectric accelerometers are fabricated using Cavity-SOI substrates with a core piezoelectric film of aluminum nitride (AlN) of about 928 nm. The fabricated piezoelectric MEMS accelerometers have good linearity (0.99996) at accelerations less than 2 g. The measured natural frequency of the accelerometer with shorter fixed sides is 98 kHz, and the sensitivity, resolution, and minimum detectable signal at 400 Hz are 1.553 mV/g, 1 mg, and 2 mg, respectively. Compared with the traditional trapezoidal cantilever with the same diaphragm area, its output voltage sensitivity is increased by 22.48%.

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“…Micro-electro-mechanical system (MEMS) based sensors and actuators are used in a wide variety of applications like military, aerospace, industrial, consumer electronics, healthcare, as well as in agriculture and environment monitoring [1][2][3][4][5][6][7][8][9][10]. The devices like pressure sensors, accelerometers, gyroscope, and temperature sensors are the few most sort after MEMS sensors for these applications [8,[11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Pandey

Dutta

Gupta

et al. 2021

J Mater Sci: Mater Electron

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Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

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An Aluminum Nitride on Silicon resonant MEMS accelerometer operating in ambient pressure

Cited by 15 publications

References 8 publications

Highly Sensitive Temperature Sensor Based on Coupled-Beam AlN-on-Si MEMS Resonators Operating in Out-of-Plane Flexural Vibration Modes

Highly Sensitive Temperature Sensor Based on Coupled-Beam AlN-on-Si MEMS Resonators Operating in Out-of-Plane Flexural Vibration Modes

A Miniaturized Piezoelectric MEMS Accelerometer with Polygon Topological Cantilever Structure

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

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