2011
DOI: 10.4028/www.scientific.net/amr.279.258
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An Alkaline SiO<sub>2</sub> Slurry for Fine Atomizing CMP

Abstract: A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional… Show more

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“…It was expected that both chemical components and mechanical processing parameters would have an important effect on the polishing performance. However, there was also a coupling effect between them [ 30 ]. The specific data of the orthogonal experiments are shown in Table A1 , the surface profile in Figure A1 , and the optical morphology in Figure A2 .…”
Section: Resultsmentioning
confidence: 99%
“…It was expected that both chemical components and mechanical processing parameters would have an important effect on the polishing performance. However, there was also a coupling effect between them [ 30 ]. The specific data of the orthogonal experiments are shown in Table A1 , the surface profile in Figure A1 , and the optical morphology in Figure A2 .…”
Section: Resultsmentioning
confidence: 99%