An AlGaN/GaN Dual Channel Triangular Microcantilever Based UV Detector

Uppalapati, Balaadithya; Gajula, Durga; Bayram, Ferhat; Gunn, Andrew J.; Khan, Digangana; Chodavarapu, Vamsy P.; Koley, Goutam

doi:10.1021/acsphotonics.1c01316

Cited by 9 publications

(3 citation statements)

References 63 publications

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“…Under UV illumination, the majority of the incident light is absorbed by the GaN channel layer and then converted efficiently to photocarriers, which turns on the 2DEG channel and then induces a very large photocurrent collected by the drain. As compared with the traditional single heterojunction HEMTs with full recess structure, ,,, the as-fabricated AlGaN/GaN double-channel HEMT PDs retain 2DEG channel with low etch damage in gate region, which has high mobility for the large photocurrent and the fast response speed.…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a twoterminal normally off device. The device exhibited a high responsivity of 2.1 × 10 7 A/W and a high specific detectivity of 1.7 × 10 15 Jones under the illumination of 9.7 μW/cm 2 , indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

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Section: Resultsmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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“…A schematic of the layer structures is shown in the inset of Figure 1b. The microcantilever sensors were fabricated by following well-established procedures established earlier [28,29]. In the first step, the AlGaN barrier layer was etched to a depth of 100 nm using BCl 3 /Cl 2 plasma chemistry, leaving the channel mesa areas with 2DEG formed at the AlGaN/GaN heterostructure interface.…”

Section: Methodsmentioning

confidence: 99%

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection

Uppalapati,

Gajula,

Bava

et al. 2023

Sensors

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This paper investigates an AlGaN/GaN triangular microcantilever with a heated apex for airflow detection utilizing a very simple two-terminal sensor configuration. Thermal microscope images were used to verify that the apex region of the microcantilever reached significantly higher temperatures than other parts under applied voltage bias. The sensor response was found to vary linearly with airflow rate when tested over a range of airflow varying from 16 to 2000 sccm. The noise-limited flow volume measurement yielded ~4 sccm resolution, while the velocity resolution was found to be 0.241 cm/s, which is one of the best reported so far for thermal sensors. The sensor was able to operate at a very low power consumption level of ~5 mW, which is one of the lowest reported for these types of sensors. The intrinsic response time of the sensor was estimated to be on the order of a few ms, limited by its thermal properties. Overall, the microcantilever sensor, with its simple geometry and measurement configurations, was found to exhibit attractive performance metrics useful for various sensing applications.

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“…This device shows promise for sequentially charging multiple capacitors over time, enabling the storage of substantial energy for applications such as wearable/implantable devices and smart monitoring systems [66][67][68]. They also open up cations in sensing force, strain, and pressure, offering credible competition to existing inorganic piezo-based material sensors, including those based on PZT [69], LiNbO3 [70], and III-Nitrides [71][72][73].…”

Section: Piezoelectric Measurementmentioning

confidence: 99%

Self-Polarized P(VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film

Muthusamy,

Uppalapati,

Azad

et al. 2023

Polymers

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Self-polarized energy harvesting materials have seen increasing research interest in recent years owing to their simple fabrication method and versatile application potential. In this study, we systematically investigated self-polarized P(VDF-TrFE)/carbon black (CB) composite thin films synthesized on flexible substrates, with the CB content varying from 0 to 0.6 wt.% in P(VDF-TrFE). The presence of –OH functional groups on carbon black significantly enhances its crystallinity, dipolar orientation, and piezoelectric performance. Multiple characterization techniques were used to investigate the crystalline quality, chemical structure, and morphology of the composite P(VDF-TrFE)/CB films, which indicated no significant changes in these parameters. However, some increase in surface roughness was observed when the CB content increased. With the application of an external force, the piezoelectrically generated voltage was found to systematically increase with higher CB content, reaching a maximum value at 0.6 wt.%, after which the sample exhibited low resistance. The piezoelectric voltage produced by the unpoled 0.6 wt.% CB composite film significantly exceeded the unpoled pure P(VDF-TrFE) film when subjected to the same applied strain. Furthermore, it exhibited exceptional stability in the piezoelectric voltage over time, exceeding the output voltage of the poled pure P(VDF-TrFE) film. Notably, P(VDF_TrFE)/CB composite-based devices can be used in energy harvesting and piezoelectric strain sensing to monitor human motions, which has the potential to positively impact the field of smart wearable devices.

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An AlGaN/GaN Dual Channel Triangular Microcantilever Based UV Detector

Cited by 9 publications

References 63 publications

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection

Self-Polarized P(VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film

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