Abstract:Potentially applied in low-noise applications such as structural health monitoring (SHM), a 1-axis piezoelectric MEMS accelerometer based on aerosol deposition is designed, fabricated, simulated, and measured in this study. It is a cantilever beam structure with a tip proof mass and PZT sensing layer. To figure out whether the design is suitable for SHM, working bandwidth and noise level are obtained via simulation. For the first time, we use aerosol deposition method to deposit thick PZT film during the fabri… Show more
“…The average thermoelectrical noise density is computed as 1.39 µg/ , with a standard deviation of 3.7%. The new design exhibits an average in-band noise density of 1.40 µg/ , with a standard deviation of 3.63%, featuring a thermoelectrical noise that is ten times greater; these results are in agreement with findings from existing studies 16 , 33 on the dominance of the thermoelectrical noise in piezoelectric accelerometers. Furthermore, the noise from the readout circuit, utilizing the AD8608 operational amplifier with a noise density of 8 nV/ 48 , corresponds to a 0.27 µg/ distortion in the in-band noise density, as per the experimental results.…”
Section: Resultssupporting
confidence: 89%
“…Our previous PVDF-based accelerometer had a sensitivity of 21.82 pC/g. Although this flat-band sensitivity was comparable to those of several recent PZT-based accelerometers 15 , 16 , our previous polymeric piezoelectric accelerometers only have a limited bandwidth of 58.5 Hz.…”
Section: Introductionsupporting
confidence: 80%
“…To implement these practical applications, critical research in the next phase is developing a proper packaging method. As noted by Gong et al 16 , piezoelectric accelerometers do not need vacuum sealing, which is the basis of simple packaging processes based on 3D-printed polymer components. Recently, Liu et al experimentally demonstrated the feasibility of using a 3D-printed package to monolithically integrate a MEMS accelerometer and a force sensor 49 .…”
Piezoelectric accelerometers excel in vibration sensing. In the emerging trend of fully organic electronic microsystems, polymeric piezoelectric accelerometers can be used as vital front-end components to capture dynamic signals, such as vocal vibrations in wearable speaking assistants for those with speaking difficulties. However, high-performance polymeric piezoelectric accelerometers suitable for such applications are rare. Piezoelectric organic compounds such as PVDF have inferior properties to their inorganic counterparts such as PZT. Consequently, most existing polymeric piezoelectric accelerometers have very unbalanced performance metrics. They often sacrifice resonance frequency and bandwidth for a flat-band sensitivity comparable to those of PZT-based accelerometers, leading to increased noise density and limited application potentials. In this study, a new polymeric piezoelectric accelerometer design to overcome the material limitations of PVDF is introduced. This new design aims to simultaneously achieve high sensitivity, broad bandwidth, and low noise. Five samples were manufactured and characterized, demonstrating an average sensitivity of 29.45 pC/g within a ± 10 g input range, a 5% flat band of 160 Hz, and an in-band noise density of 1.4 µg/$$\sqrt{{Hz}}$$
Hz
. These results surpass those of many PZT-based piezoelectric accelerometers, showing the feasibility of achieving comprehensively high performance in polymeric piezoelectric accelerometers to increase their potential in novel applications such as organic microsystems.
“…The average thermoelectrical noise density is computed as 1.39 µg/ , with a standard deviation of 3.7%. The new design exhibits an average in-band noise density of 1.40 µg/ , with a standard deviation of 3.63%, featuring a thermoelectrical noise that is ten times greater; these results are in agreement with findings from existing studies 16 , 33 on the dominance of the thermoelectrical noise in piezoelectric accelerometers. Furthermore, the noise from the readout circuit, utilizing the AD8608 operational amplifier with a noise density of 8 nV/ 48 , corresponds to a 0.27 µg/ distortion in the in-band noise density, as per the experimental results.…”
Section: Resultssupporting
confidence: 89%
“…Our previous PVDF-based accelerometer had a sensitivity of 21.82 pC/g. Although this flat-band sensitivity was comparable to those of several recent PZT-based accelerometers 15 , 16 , our previous polymeric piezoelectric accelerometers only have a limited bandwidth of 58.5 Hz.…”
Section: Introductionsupporting
confidence: 80%
“…To implement these practical applications, critical research in the next phase is developing a proper packaging method. As noted by Gong et al 16 , piezoelectric accelerometers do not need vacuum sealing, which is the basis of simple packaging processes based on 3D-printed polymer components. Recently, Liu et al experimentally demonstrated the feasibility of using a 3D-printed package to monolithically integrate a MEMS accelerometer and a force sensor 49 .…”
Piezoelectric accelerometers excel in vibration sensing. In the emerging trend of fully organic electronic microsystems, polymeric piezoelectric accelerometers can be used as vital front-end components to capture dynamic signals, such as vocal vibrations in wearable speaking assistants for those with speaking difficulties. However, high-performance polymeric piezoelectric accelerometers suitable for such applications are rare. Piezoelectric organic compounds such as PVDF have inferior properties to their inorganic counterparts such as PZT. Consequently, most existing polymeric piezoelectric accelerometers have very unbalanced performance metrics. They often sacrifice resonance frequency and bandwidth for a flat-band sensitivity comparable to those of PZT-based accelerometers, leading to increased noise density and limited application potentials. In this study, a new polymeric piezoelectric accelerometer design to overcome the material limitations of PVDF is introduced. This new design aims to simultaneously achieve high sensitivity, broad bandwidth, and low noise. Five samples were manufactured and characterized, demonstrating an average sensitivity of 29.45 pC/g within a ± 10 g input range, a 5% flat band of 160 Hz, and an in-band noise density of 1.4 µg/$$\sqrt{{Hz}}$$
Hz
. These results surpass those of many PZT-based piezoelectric accelerometers, showing the feasibility of achieving comprehensively high performance in polymeric piezoelectric accelerometers to increase their potential in novel applications such as organic microsystems.
“…Presently, there is a growing demand for MEMS accelerometers with small sizes, high sensitivity, and superior stability [ 17 ]. MEMS accelerometers can be classified based on their principles of operation, including capacitive [ 9 , 18 ], piezoresistive, resonant [ 19 , 20 ], and piezoelectric types [ 21 , 22 , 23 , 24 ]. Piezoelectric MEMS accelerometers exhibit several advantages over other types, including a wider operating frequency range, along with low power consumption, low-temperature dependence, and high sensitivity [ 25 , 26 ].…”
In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc0.2Al0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d31 of the Sc0.2Al0.8N piezoelectric film is measured by the cantilever beam method and found to be −4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations.
“…The piezoelectric cantilever beams are critical in designing intelligent systems [1][2][3] as the primary structure of sensors. The cantilever beam structures [4], characterized by wide operating bandwidth, lightweight, powerful driving force, and high electromechanical conversion efficiency, have been used in the fields of micrometer/nanomechanical systems [5][6][7], server hard disk failure detection [8,9] and controller model validation [10,11]. Therefore, the modeling analysis and dynamic motion behavior of piezoelectric cantilever beams have attracted significant works in the literature [12,13].…”
In micron or nano smart sensing systems, piezoelectric cantilever beams are distributed as major components in microsensors, actuators, and energy harvesters. This paper investigates the performance of four cantilever beam devices with “electric-force” conversion based on the inverse piezoelectric effect of lithium niobate (LiNbO3, LN) single-crystal materials. A new compact piezoelectric smart device model is proposed, designed as a single mass block connected by four beams, where devices exhibit smaller lateral errors (0.39–0.41%). The relationship between the displacement characteristics of cantilever beams and driving voltage was researched by applying excitation signals. The results show that the device has the maximum displacement at a first-order intrinsic frequency (fosc = 11.338 kHz), while the displacement shows a good linear relationship (R2 = 0.998) with driving voltage. The square wave signals of the same amplitude have greater “electrical-force” conversion efficiency. The output displacement can reach 12 nm, which is much higher than the output displacement with sinusoidal excitation. In addition, the relative displacement deviation of devices can be maintained within ±1% under multiple cycles of electrical signal loading. The small size, high reliability, and ultra-stability of Si–LN ferroelectric single-crystal cantilever beam devices with lower vibration amplitudes are promising for nanopositioning techniques in microscopy, diagnostics, and high-precision manufacturing applications.
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