An advanced approach to power module packaging

Ozmat, B.; Korman, C.S.; Fillion, R.

doi:10.1109/iwipp.2000.885167

Cited by 14 publications

(4 citation statements)

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“…Wire-bondless technologies have led to several novel packaging designs, the most notable of which create a dual-sided package architecture. Figure 2-3 shows a package designed using flip chip technology, which allows for the wire-bonds to be replaced with solder bumps, allowing for applying base plates to both sides to aid in stability [18]. Figure 2-5 shows a single chip that is incorporated into an Embedded Power Chip Module (EPCM), which replaces the conventional wire-bonds with a metallization layer and provides a heat path for topside cooling [19].…”

Section: Power Electronic Packagingmentioning

confidence: 99%

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Effect of Phase Change Material on Dynamic Thermal Management Performance for Power Electronics Packages

Hollis

Sharar

Bandhauer

2021

Journal of Electronic Packaging

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High temperature silicon carbide (SiC) die are the most critical and expensive component in electric vehicle (EV) power electronic packages and require both active and passive methods to dissipate heat during transient operation. The use of phase change materials (PCMs) to control the peak junction temperature of the SiC die and to buffer the temperature fluctuations in the package during simulated operation is modeled here. The latent heat storage potential of multiple PCM and PCM composites are explored in both single-sided and dual-sided package configurations. The results of this study show that the addition of phase change material (PCM) into two different styles of power electronics (PE) packages is an effective method for controlling the transient junction temperatures experienced during two different drive cycles. The addition of PCM in a single-sided package also serves to decrease temperature fluctuations experienced and may be used to reduce the necessary number of SiC die required for EVs, lowering the overall material cost and volume of the package by over 50%. PCM in a single-sided package may be nearly as effective as the double-sided cooling approach of a dual-sided package in the reduction of both peak junction temperature of SiC as well as controlling temperature variations between package layers.

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Section: Power Electronic Packagingmentioning

confidence: 99%

“…where ηo is the overall fin efficiency, At is the total surface area of the fins, and Ab is the area of the prime surface [18]. The heat transfer coefficient (h) was solved for using the Nusselt number (Equation 9):…”

Section: Heat Transfer Coefficientmentioning

confidence: 99%

Effect of Phase Change Material on Dynamic Thermal Management Performance for Power Electronics Packages

Hollis

Sharar

Bandhauer

2021

Journal of Electronic Packaging

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“…Instead, it is preferable to develop a module package with lower parasitic inductances. Several research groups and manufacturers have proposed to reduce the package inductance by replacing the traditional wire bond interconnections with ribbon [42], [43]; flexible PCB [44], [45], [46], [47], [48], solid posts, shims, or bumps [49], [50], [51]; solder balls [52]; directbonded solder [53]; or vias in PCB or ceramic substrates [54], [55], [56], [57]. Several packages also include integrated decoupling capacitors to mitigate the impact of stray inductances [55], [58], [59], [60], [61].…”

Section: Introductionmentioning

confidence: 99%

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

DiMarino

Mouawad

Johnson

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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Wide-bandgap power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower on-state losses. However, present power module packages are limiting the performance of these unique switches. The objective of this work is to push the boundaries of high-density, high-speed, 10 kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference issues associated with high-speed, 10 kV devices. The module achieves low and balanced parasitic inductances, resulting in a record switching speed of 250 V/ns with negligible ringing and voltage overshoot. An integrated screen reduces the commonmode current that is generated by these fast voltage transients by ten times. This screen connection simultaneously increases the partial discharge inception voltage by more than 50 %. A compact, medium-voltage termination and system interface design is also proposed in this work. With the integrated jet-impingement cooler, the power module prototype achieves a power density of 4 W/mm 3 . This paper presents the design, prototyping, and testing of this optimized package for 10 kV SiC MOSFETs.

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“…In these cases, the power semiconductor die must be fabricated with solderable front metals (SFMs), such as described in [15]. Another planar interconnect can be built up by deposited metallization onto dies usually embedded in a substrate [16]. Compared with multiple round wires, the large area planar contacts and thick conductor of these new interconnection schemes help reduce the parasitic electric resistance and inductance.…”

Section: Introductionmentioning

confidence: 99%

A Phase-Leg Power Module Packaged With Optimized Planar Interconnections and Integrated Double-Sided Cooling

Liang

Ning

Wang

et al. 2014

IEEE J. Emerg. Sel. Topics Power Electron.

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A multilayer planar interconnection structure was used for the packaging of liquid-cooled automotive power modules. The power semiconductor switch dies are sandwiched between two symmetric substrates, providing planar electrical interconnections and insulation. Two minicoolers are directly bonded to the outside of these substrates, allowing doublesided, integrated cooling. The power switch dies are orientated in a face-up/face-down 3-D interconnection configuration to form a phase leg. The bonding areas between the dies and substrates, and the substrates and coolers are designed to use identical materials and are formed in one heating process. A special packaging process has been developed so that high-efficiency production can be implemented. Incorporating high-efficiency cooling and low-loss electrical interconnections allows dramatic improvements in systems' cost, and electrical conversion efficiency. These features are demonstrated in a planar bond-packaged prototype of a 200 A/1200 V phase-leg power module made of silicon (Si) insulated gate bipolar transistor and PiN diodes.

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An advanced approach to power module packaging

Cited by 14 publications

References 0 publications

Effect of Phase Change Material on Dynamic Thermal Management Performance for Power Electronics Packages

Effect of Phase Change Material on Dynamic Thermal Management Performance for Power Electronics Packages

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

A Phase-Leg Power Module Packaged With Optimized Planar Interconnections and Integrated Double-Sided Cooling

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