An adaptive thin-film transistor

Perlman, S.S.; Ludewig, K.H.

doi:10.1109/t-ed.1967.16115

Cited by 34 publications

(8 citation statements)

References 5 publications

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“…The original work on ferroelectric-semiconductor devices was done by evaporating thin films of semiconductors such as Cd, CdS, and CdSe on a bulk single crystal of TGS. [207][208][209] Though much work still has to be done, ferroelectric semiconductor devices have many important applications such as adaptive resistors and transitors. Those devices possess the very significant advantages of providing non-volatile and analog mem-…”

Section: Use In Memory Devicesmentioning

confidence: 99%

Growth and properties of triglycine sulfate (TGS) crystals: Review

1993

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Section: Use In Memory Devicesmentioning

confidence: 99%

Growth and properties of triglycine sulfate (TGS) crystals: Review

1993

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“…The conductivity modulation of F/S using a bulk ferroelectric like TGS [17][18][19][20]22 or BaTiO 3 ͑Ref. 21͒ single crystals has been reported by many authors.…”

Section: B F/smentioning

confidence: 99%

“…Additionally, this system has a practical importance as ferroelectric field effect transistors ͑ferroelectric FETs͒ or resistors. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] In fact, this system has long been studied, and its limitation was warned by Batra et al [14][15][16] By far, no approach has succeeded to realize it with conventional semiconductor materials. Therefore, the clarification of the physical feasibility of ferroelectric FETs and their miniaturization limit is desired.…”

Section: Introductionmentioning

confidence: 99%

Theoretical stability of the polarization in insulating ferroelectric/semiconductor structures

Watanabe

1998

Journal of Applied Physics

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Stability of the polarization in a thin ferroelectric film on a semiconductor is theoretically investigated using an insulating homogeneous Ginzburg-Landau theory. Dependence of the stability on various parameters such as the ferroelectric thickness, the materials ͑BaTiO 3 , KNbO 3 , PbTiO 3 , Bi 4 Ti 3 O 12 ͒, the interfacial defects, the work function difference, the epitaxial orientation, and the buffer insulator thickness is numerically and analytically studied, and the results are qualitatively compared with the past experiments on ferroelectric field effect devices. The spontaneous polarization in a ferroelectric single-domain on a semiconductor is shown to be bistable in agreement with recent experiments. Furthermore, its thickness limit of the ferroelectric stability is found to be very small, implying a great potential of this structure for the miniaturization. The single-domained spontaneous polarization is destabilized when even a very thin insulating layer exists between the ferroelectric and the semiconductor. The formation of the multidomain is found to be insufficient to stabilize the spontaneous polarization in thin ferroelectrics used in experiments. The spontaneous polarization can be stabilized at one polarity by the defects or the surface states at the ferroelectric/insulator interface, which explains its temporary stability experimentally suggested. The thermodynamic liner susceptibility is crucial for the stability, while the ferroelectric stability is predicted to be enhanced by modifying it effectively by changing the epitaxial orientation of the ferroelectric film. An addition of metallic layer between the ferroelectric and the insulator changes this restriction, although this invites another instability of the conductance modulation. To explain the experimental instabilities, they are classified into four categories. The present study suggests also a limitation of the assumption of an insulating ferroelectric under a very large depolarization field.

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“…Ferroelectric materials are low-symmetry crystals, and the specific polarization direction can be formatted under an appropriate external electric field. Due to the nonlinear relationship between the polarization of the ferroelectric material and the applied electric field, a significant electrical hysteresis can be observed in the polarization-electric field (P-E) loops [150][151][152][153][154] . Therefore, the polarization state of the ferroelectric layer can be changed by applying an appropriate gate pulse voltage, thus allowing the synapse to be tuned by multidomain polarization switching.…”

Section: Ferroelectric Synapsesmentioning

confidence: 99%

Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

Zhang

et al. 2023

Microsyst Nanoeng

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Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for changes in synaptic strength, enabling the brain to learn from experience. With the rapid development of neuromorphic electronics, tremendous efforts have been devoted to designing and fabricating electronic devices that can mimic synapse operating modes. This growing interest in the field will provide unprecedented opportunities for new hardware architectures for artificial intelligence. In this review, we focus on research of three-terminal artificial synapses based on two-dimensional (2D) materials regulated by electrical, optical and mechanical stimulation. In addition, we systematically summarize artificial synapse applications in various sensory systems, including bioplastic bionics, logical transformation, associative learning, image recognition, and multimodal pattern recognition. Finally, the current challenges and future perspectives involving integration, power consumption and functionality are outlined.

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An adaptive thin-film transistor

Cited by 34 publications

References 5 publications

Growth and properties of triglycine sulfate (TGS) crystals: Review

Growth and properties of triglycine sulfate (TGS) crystals: Review

Theoretical stability of the polarization in insulating ferroelectric/semiconductor structures

Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

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