Figure 4 Characteristic impedance and dispersion characteristicsfor the dominant and first two higher-order modes of shielded dielectric-loaded edge-coupled CBCPW structure with a = 4 mm, h , = h , = 1 mm, E ,~ = 2.22, and other parameters as in Figure 3 choosing appropriate loading and structural parameters, one can optimize the behavior with respect to isolation, singlemode bandwidth, and uniformity of coupling. ABSTRACT A new method for the entraction of the 13-element GaAs FET model from hot S parameters is presented. The method reduces the uniqueness problem that mists between the parasitic gate resistance R, and the channel resistance K,. Ihirteen error functions are used, with the order of o~~rimiza~ion determined through a principle-components semihi& analysis. 0 ABSTRACT In this work we present a new optical& controlled microwave matching technique. In this technique the gap between two microwave coupled