A new systematic optimization strategy for microwave power device modeling

Abstract

A new systematic optimization strategy for extracting the model parameters of a small‐signal equivalent circuit for a microwave power GaAs MESFET is proposed. On the basis of sensitivity analysis of error functions to the model elements, rearrangement of the optimization sequence of suberror functions referring to the model element sensitivities, and transformation of the optimization directions of the error functions along with optimal directions, the global‐error function is fast convergent under given starting values. In addition, a logarithmic damping algorithm is also proposed for stabilizing the final results by controlling the updates of insensitive model elements. The results show that the agreement is good between the calculated values and the measurement data of a MESFET. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 269–273, 2000.