An accurate computational method for analysis of electromechanical properties of structures with metal-GaN piezoelectric semiconductor contact

Qin, GuoShuai; Zhang, Xin; Ma, Shuaijie; Zhang, Qiaoyun; Fan, CuiYing; Zhao, Minghao

doi:10.1016/j.commatsci.2018.05.041

Cited by 15 publications

(5 citation statements)

References 33 publications

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“…Consider the SH waves in the Al substrate with a n-type GaN thin film. The material properties of GaN are listed in Table 1 [39,40]. We consider Al substrate with c ′ 44 = 2 . 61 × 10 10 N / m 2 and ρ ′ = 2699 kg / m 3 [41].…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate

Wei

et al. 2023

Mathematics and Mechanics of Solids

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Shear horizontal (SH) waves propagating in a metal substrate covered with a transversely isotropic piezoelectric semiconductor thin film is analyzed in the present paper. The Schottky junction, which is created by the metal and the n-type piezoelectric semiconductor with a higher Fermi level, can be seen as an electrically gradient layer between the substrate and the thin film. The transfer matrix of the Schottky junction is derived by using Magnus series expansion and approximate laminated medium methods, respectively. The influences of the Schottky junction, semiconductor coupling, doping density, and electric boundary conditions on the dispersion and attenuation and the first three wave modes are discussed via numerical example. It reveals that numerical results obtained by these two methods are well matched and the existence of Schottky junction has less influence on the dispersion of SH surface wave although, but evidently influences on the attenuation. In particular, the mode shapes of electric potential, electric displacement, carrier perturbation density, and the electric current density are affected evidently by the existence of Schottky junction.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate

Wei

et al. 2023

Mathematics and Mechanics of Solids

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“…As a typical PSC with pyroelectricity, the material properties of GaN are given in Table 1 [24]. Here, the thickness of a plate is set to 0.2 μm.…”

Section: Numerical Analysis and Discussionmentioning

confidence: 99%

A shooting method for nonlinear boundary value problems in a thermal piezoelectric semiconductor plate

et al. 2020

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Based on the pyroelectricity, piezoelectricity, and thermoelasticity in nonlinear constitutive equations, we report a thermal piezoelectric semiconductor model under a mechanical load, a Schottky contact boundary condition, and a temperature gradient. To solve this nonlinear boundary value problem, we propose a shooting method. In comparison with the results obtained by COMSOL, the shooting method is reliable. Furthermore, the influence of the temperature gradient on the extended displacements and stress fields is discussed. The numerical results show that a small change in the temperature has the remarkable effect on a mechanical electric field in thermal piezoelectric semiconductors.

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“…İş fonksiyonu, malzeme yüzeylerinin en temel özelliklerinden biridir ve metalyarıiletken kontakların elektriksel özelliklerini doğrudan etkilemektedir (Ishii, Matsumura, Sakai, & Sakata, 2001) Üretilen bir devre elemanının tam kapasite ile çalışabilmesi, devreyi oluşturan temel yapının, bütün özelliklerinin bilinmesine bağlıdır. Schottky kontağın parametrelerini geleneksel ve yeni yaklaşımlarla çıkarmak için modelleme konusunda farklı bilimsel çalışmalar yapılmaktadır (Eledlebi, Ismail, & Rezeq, 2016;Qin et al, 2018;Rezeq et al, 2018;Tang & Stake, 2011;Timpa et al, 2021;Vieira & Cendula, 2021) Si ve n-tipi Si için) için tek elemanlı metalizasyon sistemlerinde kullanılmak için oldukça uygundur (Vali et al, 2018). Mo gibi yansıtıcı metaller ise Schottky kontakların, ısıl işlemlerde daha fazla esnekliğe ve yüksek sıcaklıklarda daha fazla güvenilirliğe sahip olması nedeniyle tercih edilmektedir (Takano et al, 2000).…”

Section: Introductionunclassified

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

Kahveci¹,

Kaya²

2022

Karadeniz Fen Bilimleri Dergisi

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Bu çalışmada, Al, Mo, Cu ve Ag metalleri ile n-tipi Si yarıiletkeni kullanılarak farklı metal/yarıiletken kontak yapısı modellenmiştir. Kontakların 0-0.25 V aralığında ileri beslem yarı logaritmik akım-gerilim karakteristiği termiyonik emisyon teorisi kullanılarak elde edilmiştir. Kontak modellerin metalin iş fonksiyonuna bağlı olarak engel yükseklikleri ve idealite faktörleri hesaplanmıştır. En düşük engel yüksekliği 0.64 eV olarak Al/n-Si model kontak için, en büyük engel yüksekliği ise 0.82 eV olarak Ag/n-Si model kontak için hesaplanmıştır. Kontak modelleri ayrı hacimsel hücrelere bölünerek bir ağ oluşturma işlemi gerçekleştirilmiştir. Böylece akım iletimi sırasında, kontak geometrisi boyunca, yüzeyin elektron konsantrasyonu, hol konsantrasyonu ve elektriksel potansiyel değişimleri modellenerek farklı parametrelerin etkileri simule edilerek kontağın üzerindeki değişimleri incelenmiştir.

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An accurate computational method for analysis of electromechanical properties of structures with metal-GaN piezoelectric semiconductor contact

Cited by 15 publications

References 33 publications

Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate

Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate

A shooting method for nonlinear boundary value problems in a thermal piezoelectric semiconductor plate

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

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