An Accurate Compact Analytical Model for the Drain Current of a TFET From Subthreshold to Strong Inversion

Vishnoi, Rajat; Kumar, M. Jagadesh

doi:10.1109/ted.2014.2381560

Cited by 40 publications

(31 citation statements)

References 24 publications

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“…The 2D Poisson's equation

\frac{\partial^{2} ψ_{i} ((),, x, y)}{\partial x^{2}} + \frac{\partial^{2} ψ_{i} ((),, x, y)}{\partial y^{2}} = - \frac{{italicqN}_{i}}{{normalε}_{i}}

is solved on the devices of Figure using a parabolic approximation of the 2D potential, ψ i (x, y), where, i = 1, 2, 3, 4 corresponds to regions I (− a ≤ x ≤ 0), II (0 ≤ x ≤ b ), III ( b ≤ x ≤ c ), and IV ( c ≤ x ≤ d ), respectively, of the device, regions I, and IV being the junction depletion regions …”

Section: Extraction Of Threshold Voltage In Tfetsmentioning

confidence: 99%

“…Such models, however, must be robust and must be able to respond accurately to a wide range of important device parameters, including dimensions and applied voltage. A number of analytical models on TFETs have been proposed till date, each being derived with objectives of satisfying the variety and variation of different dependent device parameters …”

Section: Introductionmentioning

confidence: 99%

“…A number of analytical models on TFETs have been proposed till date, each being derived with objectives of satisfying the variety and variation of different dependent device parameters. [4][5][6]16 Threshold voltage is a critical electrical parameter in MOS-based devices as it signifies the degree of the gate's influence on the channel. In a TFET which operates by interband tunneling, the threshold voltage represents the gate voltage at which the energy bands at the tunnel junction begin to saturate.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A temperature‐dependent surface potential‐based algorithm for extraction of threshold voltage in homojunction TFETs

Goswami

Bhowmick²

2017

Int J Numerical Modelling

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In this paper, we propose an algorithm to extract threshold voltage in homojunction tunnel field effect transistors (TFETs). Single gate TFET and double gate TFET are the geometries which are considered for verification of the method. Firstly, a generalized model of surface potential based on 2D Poisson equation for homojunction TFETs is developed. Secondly, the algorithm involves a number of geometrical operations on surface potential plots, which are performed computationally. From the plots of surface potential and the geometrical constructions, a parameter, range_point, is defined through mathematical formulations. The threshold voltage is determined by subjecting the range_point to a set of constraints which are found to be same for both the devices. The validity of the algorithm is confirmed by considering different parameters like drain voltage, gate oxide thickness, and temperature for both low‐k and high‐k gate dielectric materials in TFETs. The temperature variation is validated for a heterojunction TFET too using the same generalized model of surface potential.

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“…The 2D Poisson's equation

\frac{\partial^{2} ψ_{i} ((),, x, y)}{\partial x^{2}} + \frac{\partial^{2} ψ_{i} ((),, x, y)}{\partial y^{2}} = - \frac{{italicqN}_{i}}{{normalε}_{i}}

Section: Extraction Of Threshold Voltage In Tfetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A temperature‐dependent surface potential‐based algorithm for extraction of threshold voltage in homojunction TFETs

Goswami

Bhowmick²

2017

Int J Numerical Modelling

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“…On the other hand, quantum mechanical effects including quantization of energy and reduction of the electron density of states appeared in narrow channels with a silicon body thickness is <10 nm [36][37][38][39]. Therefore, these effects can be ignored in our study because a silicon body thickness of 10 nm is used, as in other simulation-based TFET studies [16,[40][41][42][43][44][45].…”

Section: D Poisson's Equation Solutionmentioning

confidence: 99%

“…Knowing the electric field, the BTBT generation rate, expressed in terms of the number of carriers tunneling from the valence band of the source to the conduction band of the channel per unit volume per unit time (G BTBT ), can be calculated using Kane's tunneling model as [45,47]:…”

Section: Tunneling Current Derivationmentioning

confidence: 99%

A 3D analytical modeling of tri-gate tunneling field-effect transistors

2016

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In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the trigate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson's equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with the 3D device simulation results without the need of fitting parameters. Additionally, the dependence of the tunneling current on the device parameters in terms of the gate oxide thickness, gate dielectric constant, channel length, and applied drain bias is investigated and also demonstrated its agreement with the device simulations.

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