An AC-DC rectifier for RF energy harvesting system

Lin, Gao-Ching; Lee, Min-Wei; Hsu, Yu-Wei

doi:10.1109/apmc.2012.6421822

Cited by 10 publications

(3 citation statements)

References 8 publications

(5 reference statements)

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“…Furthermore, the V th in a transistor tends to be significantly higher than the on-voltage for a Schottky diode (typically < 0.5 V), thus leading to lower values of η rectifier when using transdiode transistors. Several efforts have been made to boost the latter by either lowering the V th [38] or by using self-V th cancellation techniques [39,40]. With these less ideal device characteristics, as compared to Schottky diodes, the question arises as to why one would employ transistors in DC rectifiers at all.…”

Section: Schottky Diodesmentioning

confidence: 99%

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Semple

Georgiadou

Wyatt-Moon

et al. 2017

Semicond. Sci. Technol.

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Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

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Section: Schottky Diodesmentioning

confidence: 99%

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Semple

Georgiadou

Wyatt-Moon

et al. 2017

Semicond. Sci. Technol.

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“…The DC supply plays as an important role in energy scavenging system, radio frequency identification (RFID), and antenna [1]- [6]. The input voltage from the environment is accumulated and converted using rectifier block.…”

Section: Introductionmentioning

confidence: 99%

Investigation of different width size of transistor on internal resistance and output power in CMOS rectifier using two PMOS and NMOS

Raop

Radzuan

Hamzah

et al. 2013

2013 IEEE Student Conference on Research and Developement

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This paper presents the simulation studies on different width size of PMOS and NMOS on internal resistance and output power in CMOS rectifier. This investigation focuses on the internal resistance of the MOSFET and output power in the rectifier. The proposed CMOS rectifier considered the PMOS carrier mobility by increasing the width size of transistors rapidly. This simulation is done using CADENCE simulation software. The best configuration of CMOS rectifier is selected based on the total internal resistance and output power of the CMOS rectifier.

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“…The works of Mandal et al [3] to Shokrani et al [8] proposes several threshold cancellation techniques to minimize the effect of the turn on voltage of the CMOS device. In 2012, works of Lin et al [7] exploited the use of native CMOS device in lowering the threshold voltage of the transistor. However, the drawback of using a low threshold voltage device is the increase in leakage current.…”

Section: Introductionmentioning

confidence: 99%

Design of 900 Mhz AC to DC Converter Using Native Cmos Device of TSMC 0.18 Micron Technology for RF Energy Harvest Application

Rodriguez¹,

Cruz²,

Ramos³

2015

ujeee

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RF signal carries very low amount of energy and can be easily dissipated as heat loss. Threshold voltage and leakage current that are inherent in MOS transistors significantly affect the performance of an RF AC to DC converter. A device with bulk connected to its drain improves the threshold voltage and leakage current. This work designs the half-wave and full-wave AC to DC converters with devices' bulk connected to source and devices' bulk connected to drain. The designs used the native devices in TSMC 0.18 micron CMOS technology, and were simulated using transient analysis in different process corners and operating temperatures. In simulations, the RF signal was represented by a sinusoidal input of 900 MHz frequency and of 390 mV amplitude. The sizes of transistors and the number of stages, of each converter, that resulted to highest power efficiency were determined via circuit simulations. The optimal design was a four-stage half-wave AC to DC converter with devices' bulk connected to drain, which produced a DC output of 2.7 V with 37.42 % efficiency at 100 kilo ohm load.

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An AC-DC rectifier for RF energy harvesting system

Cited by 10 publications

References 8 publications

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Investigation of different width size of transistor on internal resistance and output power in CMOS rectifier using two PMOS and NMOS

Design of 900 Mhz AC to DC Converter Using Native Cmos Device of TSMC 0.18 Micron Technology for RF Energy Harvest Application

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