2005
DOI: 10.1109/jssc.2005.848019
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An 800-MHz embedded DRAM with a concurrent refresh mode

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Cited by 36 publications
(14 citation statements)
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“…Thus, the cell area is not affected by the capacitance value [15]. Indeed, as shown in [16], the capacitance values analyzed in this work can be obtained with trench capacitors. Table III shows the area (in m ) of the conventional SRAM and eDRAM cells and the macrocell varying the number of data bits from 1-to 4-bit.…”
Section: Areamentioning
confidence: 85%
“…Thus, the cell area is not affected by the capacitance value [15]. Indeed, as shown in [16], the capacitance values analyzed in this work can be obtained with trench capacitors. Table III shows the area (in m ) of the conventional SRAM and eDRAM cells and the macrocell varying the number of data bits from 1-to 4-bit.…”
Section: Areamentioning
confidence: 85%
“…Therefore, the number of banks has been set to eight across all the experiments. This number of banks is reasonable, since it is common to find designs having more banks in the literature [8]. Finally, since one bank only can perform one swap operation at a given time, the number of banks also matches the number of intermediate buffers.…”
Section: Performance Evaluationmentioning
confidence: 99%
“…This number of banks is reasonable and it is common to find other cache designs in the literature with much more banks and the same or lower bank storage capacity [5] [13]. Nevertheless, such a number of banks can be reduced by implementing the eDRAM banks with more than two ways.…”
Section: Hybrid Lcache Designmentioning
confidence: 99%