An 800-MHz–6-GHz Software-Defined Wireless Receiver in 90-nm CMOS

Bagheri, R.; Mirzaei, Ahmad; Chehrazi, S.; Heidari, M.E.; Lee, Minjae; Mikhemar, Mohyee; Tang, Wai; Abidi, A.A.

doi:10.1109/jssc.2006.884835

Cited by 348 publications

(235 citation statements)

References 17 publications

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“…CONCLUSIONS Table I shows a comparison of the balun-LNA to three other wideband CMOS active baluns [1][2][3], two passive baluns implemented in CMOS [5] and GaAs [6] and two wideband inductorless single-ended LNAs [4,7]. The proposed balun-LNA is more wideband than the passive integrated baluns [5,6] while showing smaller gain and phase imbalances.…”

Section: Linearitymentioning

confidence: 99%

“…Upcoming software-defined and multi-standard radio architectures demand wideband LNAs [1]. In contrast to a multi-LNA solution, a wideband LNA is flexible and efficient in terms of area, power and costs.…”

Section: Introductionmentioning

confidence: 99%

“…Only a few wideband LNA-balun combinations with sufficient low noise figure for multi-band receivers have been published [1][2][3]. These circuits all exploit the noise canceling topology published in [4,Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Both paths use an equal load resistor (R L ), however, the transconductance (g m ) differs more than a factor of 2, leading to a gain difference (∆g m ·R L ) of at least 6dB. Next to this, the circuits in [1][2][3] all use integrated inductors. As in newer CMOS technologies the area-costs increase, area-consuming integrated inductors become increasingly expensive.…”

Section: Introductionmentioning

confidence: 99%

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An inductorless wideband balun-LNA in 65nm CMOS with balanced output

Blaakmeer

Klumperink

Nauta

et al. 2007

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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-An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm 2 . The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

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Section: Linearitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An inductorless wideband balun-LNA in 65nm CMOS with balanced output

Blaakmeer

Klumperink

Nauta

et al. 2007

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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confidence: 99%

A Wideband Balun LNA I/Q-Mixer combination in 65nm CMOS

Blaakmeer

Klumperink

Leenaerts

et al. 2008

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

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Wideband receivers are required for many applications including the upcoming software-defined radio (SDR) architectures and ultra-wideband communication standards [1][2][3]. These standards cover a frequency spectrum from a few hundred MHz up to 6GHz. Co-operability with other communication devices (e.g., cellular and WLAN) operating in the same spectrum is mandatory, setting especially stringent demands on the wideband linearity of such receivers. The use of area-consuming on-chip inductors must be avoided as the cost per area of modern CMOS processes is high. The receiver preferably has a single-ended RF-input, as this avoids the use of an external broadband balun and its accompanying losses. A 65nm CMOS inductor-less wideband LNAmixer topology is presented, merging a current commutating I/Qmixer with a noise canceling balun-LNA. Figure 17.3.1 shows the topology of the proposed receiver frontend, which combines the functionality of a balun, an LNA and an I/Q-Mixer (Blixer) into one circuit cell. The transistor in commongate (CG) configuration gives wideband input matching (Z in ≈1/g m ). The inverter-based common-source (CS) stage produces a current in anti-phase with the CG output current, providing the single-to-differential conversion. The normally dominant thermal noise of the CG stage is canceled robustly [4]. The noise current of the CG transistor generates a noisy input voltage on the source resistance (R S ). This voltage results in an output current in the CS stage which is in-phase and fully correlated with the noise current of the CG transistor. The CG noise can thus be canceled at the differential output. The effective g m of the CS stage is 4 times higher than the CG g m in order to limit its noise contribution. The output currents of the CG and CS stage (g m ·v rf and 4·g m ·v rf in Fig. 17.3.1) are distributed to two identical current-commutating mixer cells, as shown in Fig. 17.3.2. The drains of the transistors commutating the CS current are loaded by only ¼ of the total RC load. The difference in loading compensates the (4×) difference in g m of the CG and CS stage, leading to equal conversion gain of the CG and CS side of the circuit. This gain balancing renders simultaneous canceling of the noise and distortion of the CG transistor, as in the LNA in [5]. However, in contrast to that design, here the canceling takes place at the IF output, after frequency translation. As the distortion of the CG transistor is canceled, the inverter-based CS stage is biased for minimal 2 ndorder distortion to obtain a high IIP2 of the complete circuit. In contrast to narrowband systems 2 nd -order distortion products can fall in-band, thus obtaining a high IIP2 is important for wideband receivers. The Blixer topology has only two internal RF nodes, the drains of the CG and CS transistors. The impedance at these points is set by the input impedance of the mixer devices. This impedance (~1/g m of the mixer transistors) is low, approximately 100Ω and 25Ω for the CG and CS side, respectively. The absence of high ...

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OFDM Transform‐Domain Receivers for Multi‐Standard Communications

Hueber

Staszewski²

2010

Multi‐Mode/Multi‐Band RF Transceivers for Wireless Communications

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An 800-MHz–6-GHz Software-Defined Wireless Receiver in 90-nm CMOS

Cited by 348 publications

References 17 publications

An inductorless wideband balun-LNA in 65nm CMOS with balanced output

An inductorless wideband balun-LNA in 65nm CMOS with balanced output

A Wideband Balun LNA I/Q-Mixer combination in 65nm CMOS

OFDM Transform‐Domain Receivers for Multi‐Standard Communications

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