An 80&#x03BC;V<inf>rms</inf>-temporal-noise 82dB-dynamic-range CMOS Image Sensor with a 13-to-19b variable-resolution column-parallel folding-integration/cyclic ADC

Column-Parallel ADCs for CMOS Image Sensors and Their FoM-Based Evaluations

“…In the CIS chip using this ADC with 13-bit cyclic ADC for the residue output, maximally 19-bit resolution using M of 128 [73] and 17b DNL of +1.4LSB/−0.9LSB using M of 32 [75] has been demonstrated.…”

“…4 [24], "SAR" [25]- [42], "Cyclic" [43]- [66], and "Delta-Sigma" [67]- [78]. The group of ADCs using the 1 storder incremental delta sigma modulator and extended conversion for the residue output [73]- [78] is categorized in the "Delta-Sigma". Figure 10 shows the noise versus pixel rate of CISs reported.…”

A three‐dimensional multifunctional compound‐eye endoscopic system with extended depth of field

“…As a result, the effective depth of field of the compound images can be made greater than the value determined by the lens's F-number. In addition, the S/N ratio of the captured images improves with progress in imaging elements (higher sensitivity, lower noise) [30], and thus one can expect that the deterioration of the S/N ratio due to inverse filtering will lose importance in the future. With a conventional lens, objects located at a distance determined by the image-forming (conjugate) relationships are rendered sharply, but other objects are blurred.…”

“…However, extension of the depth of field has the advantages of fewer undetected lesions and better sensitivity of the imaging system. In addition, the S/N ratio of the captured images improves with progress in imaging elements (higher sensitivity, lower noise) [30], and thus one can expect that the deterioration of the S/N ratio due to inverse filtering will lose importance in the future. In TOMBO, the lens array must be placed in a limited space determined by the light-receiving area of the imaging device.…”

Temporal Readout Noise Analysis and Reduction Techniques for Low-Light CMOS Image Sensors

“…After performing these noise reduction techniques, 1/f and RTS like noise originating from the in-pixel amplifying transistor become the dominant noise sources. During the last few years, many works focused on reducing the input-referred temporal noise below the limit of one electron by implementing high column level gain and correlated multiple sampling (CMS) [4] [5].Yet works based on these techniques reported temporal noise ranging between 1 and 2 electrons RMS. The combination of these techniques with device optimization like using in-pixel buried channel source followers [6] [7] or inpixel PMOS amplifier [8] showed that the noise can be reduced slightly below the one electron RMS barrier.…”