An 1800 V triple implanted vertical 6H-SiC MOSFET

Peters, Dethard; Schörner, Reinhold; Friedrichs, Peter; Völkl, J.; Mitlehner, H.; Stephani, D.

doi:10.1109/16.748874

Cited by 48 publications

(15 citation statements)

References 10 publications

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“…In 1997, the first study for the planar DMOSFETs was reported [15]. With the absence of trenches, a high breakdown voltage of 760 V has been achieved in this work and another group followed with kV-class MOSFETs [16]. Since diffusion coefficients for dopant atoms are extremely low in SiC, this planar structure is usually formed by selective ion implantation for source and base regions (double implantation).…”

mentioning

confidence: 86%

Development of SiC diodes, power MOSFETs and intelligent power modules

Nakamura

Miura

Kawamoto

et al. 2009

Physica Status Solidi (a)

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Silicon carbide (SiC) power devices have been expected as next‐generation power‐saving devices. We succeeded in fabricating very large area (1 cm2) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including crystal defects. Heterojunction diodes with avalanche energy of over 2000 mJ/cm2 were also developed. The reliability of gate oxide films of SiC DMOSFETs was enhanced to a level that is comparable to silicon power devices by improving oxidation techniques. We succeeded in fabricating SiC trench MOSFETs with low on‐resistance (1.7 mΩ cm2). 250 °C operation of intelligent power modules (IPMs) with SiC DMOSFETs was achieved by using a new attachment technology. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 86%

Development of SiC diodes, power MOSFETs and intelligent power modules

Nakamura

Miura

Kawamoto

et al. 2009

Physica Status Solidi (a)

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“…Much attention has focused on developing SiC power MOSFET's because of the prospect of power MOSFET's with voltage blocking capabilities well into the kilovolt range with much lower specific on resistances than corresponding silicon power MOSFET's and IGBT's. The extent to which the potential of SiC power MOSFET's can be fully realised depends upon the device design, SiC polytype, substrate and epilayer quality and the maturity of contact and oxide growth technologies [24].…”

Section: Power Transistors: Mosfet'smentioning

confidence: 99%

Emerging Silicon Carbide Power Device Technologies

Elford¹,

Mawby²

2000

Journal of Wide Bandgap Materials

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“…While many high performance power devices have been demonstrated on 4H-and 6H-SiC wafers [1]- [3], far fewer devices on 3C-SiC have been demonstrated. There exists no substrates of 3C polytype, and 3C epilayers are grown heteroepitaxially on large area silicon substrates by chemical vapor deposition (CVD) [4].…”

Section: Introductionmentioning

confidence: 99%

N-channel 3C-SiC MOSFETs on silicon substrate

Wan

Capano

Melloch

et al. 2002

IEEE Electron Device Lett.

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Inversion-mode, n-channel 3C-SiC MOSFETs have been fabricated in a 3C-SiC epilayer grown on a 2 -off-axis Si(001) substrate with optimized SiC processing techniques. Phosphorus implantations are employed for source/drain formation and a sheet resistance of 70 per square is obtained after annealing at 1250 C for 30 min in argon. Both drain characteristics and subthreshold characteristics show typical transistor behavior with an effective channel mobility of 165 cm 2 /Vs. The breakdown field of the gate oxide is about 3.5 MV/cm.

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An 1800 V triple implanted vertical 6H-SiC MOSFET

Cited by 48 publications

References 10 publications

Development of SiC diodes, power MOSFETs and intelligent power modules

Development of SiC diodes, power MOSFETs and intelligent power modules

Emerging Silicon Carbide Power Device Technologies

N-channel 3C-SiC MOSFETs on silicon substrate

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