Amplification in erbium-doped silica-based planar lightwave circuits

Kitagawa, Takeshi; Hattori, Katsumi; Shuto, K.; Yasu, M.; Kobayashi, M.; Horiguchi, M.

doi:10.1049/el:19921159

Cited by 107 publications

(36 citation statements)

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“…The dispersion of Er O may be improved by codoping with P O , Al O , and Ga O [38], [39]. However, high internal gain has so far only been achieved in a silica-on-silicon EDWA using low Er concentration and a long path in a phosphosilicate glass (PSG) [33], [34] or Al-doped germanosilicate glass [42], [43]. Furthermore, the weak absorption of Er at 980 nm requires the use of high-power pumps.…”

Section: B Silica-on-silicon Edwasmentioning

confidence: 99%

Sol-gel silica-on-silicon buried-channel EDWAs

Huang

Syms

2003

J. Lightwave Technol.

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Abstract-Silica-on-silicon erbium-doped waveguide amplifiers (EDWAs) fabricated by the sol-gel route are demonstrated. The preparation of stable sols is first described, with emphasis on identifying chemical routes that allow the incorporation of sufficient concentration of erbium without precipitation or gelation. Erbium-doped glasses containing various codopants, such as phosphorus, aluminum, germanium and ytterbium are formed and used in the construction of buried channel guide EDWAs. A range of optical measurements is presented, and the effects of the dopants in eliminating erbium ion quenching and improving pumping efficiency are evaluated. The best material system-Er/Yb codoped aluminophosphosilicate glass-has low background loss and a net gain of 1.1 dB/cm.

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Section: B Silica-on-silicon Edwasmentioning

confidence: 99%

Sol-gel silica-on-silicon buried-channel EDWAs

Huang

Syms

2003

J. Lightwave Technol.

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“…Suitable techniques for forming the glass layers include sputtering [1], [2], FHD and PECVD [3]- [6], and the sol-gel process [7]- [10]. Useful gains have already been reported; for example, Schmulovich et al reported a reduction of loss on pumping of 8.75 dB/cm in a straight erbium-doped sodium calcium silicate guide in 1992 [1].…”

mentioning

confidence: 99%

Analysis of folded erbium-doped planar waveguide amplifiers by the method of lines

Huang

Syms

1999

J. Lightwave Technol.

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“…This can result in cross-talk between different wavelength channels when amplifying wavelength division multiplexed (WDM) signals. Alternatively, planar erbium-doped waveguide amplifiers (EDWA) [4] offer a potential solution for amplification at high speed on a chip. Er-doped amplifiers with their long excited-state lifetime of ~10 ms and accordingly longer gain recovery time do not exhibit such transient channel cross-talk.…”

Section: Introductionmentioning

confidence: 99%

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

Bradley¹,

Silva²,

Gay³

et al. 2009

Opt. Express

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Abstract:Signal transmission experiments were performed at 170 Gbit/s in an integrated Al 2 O 3 :Er 3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2 7 -1 bit sequence. ©2009 Optical Society of America

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Amplification in erbium-doped silica-based planar lightwave circuits

Cited by 107 publications

References 0 publications

Sol-gel silica-on-silicon buried-channel EDWAs

Sol-gel silica-on-silicon buried-channel EDWAs

Analysis of folded erbium-doped planar waveguide amplifiers by the method of lines

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

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