Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

“…Besides the beneficial effect on the stability of the ohmic contacts, a stable protective coating is highly desirable for sensors and electronics exposed to harsh environments, since it can inhibit degradation occurring in other device components such as active areas, interconnects or gate metallizations. [10][11][12][13] …”

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

“…The appeal of these Si-based coatings is attributed to their highly desirable combination of physical, mechanical, electrical, and optoelectronic properties making them prime candidates for applications in the automotive, aerospace, computer chip, solar, light-emitting, and medical industries. [1][2][3][4][5][6] In consideration of the intense current interest in SiN x and SiN x C y , and the expectation that their applications will continue to witness further expansion and extensive diversification, we present an overview on the latest trends and developments in hydrogenated and non-hydrogenated silicon nitride and silicon carbonitride deposition techniques and associated post-deposition processing technologies. Given the fast-moving nature of SiN x and SiN x C y technological advances, the intent is to present an survey of work published within the last five years for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiN x :H and SiN x :H(C)) and non-hydrogenated (SiN x and SiN x (C)) forms.…”

THE EFFECT OF Xe ION AND NEUTRON IRRADIATION ON THE PROPERTIES OF SiC AND SiC(N) FILMS PREPARED BY PECVD TECHNOLOGY

“…The correlations of 〈r〉 to Young's modulus, hardness, thermal conductivity, resistivity, refractive index, intrinsic stress, mass density and porosity show that an extremely wide range in material properties (in some cases several orders of magnitude) can be achieved through reducing 〈r〉 via a controlled incorporation of terminal Si-Hx and C-Hx groups [4]. a-SiC:H thin films deposited by PECVD as protective coatings for harsh environment applications were investigated [5]. The effect of substrate temperature on the rate of remote microwave hydrogen plasma chemical vapor deposition of a-SiC:H thin films using dimethylsilane and trimethylsilane was reported [6].…”