Amorphous silicon carbide coatings grown by low frequency PACVD: Structural and mechanical description

Soum‐Glaude, Audrey; Thomas, L.; Tomasella, Éric

doi:10.1016/j.surfcoat.2005.11.066

Cited by 27 publications

(22 citation statements)

References 9 publications

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“…As C 2 H x molecules and radicals are involved in the formation of C-C bonds in the films when increasing plasma power or gas residence time, C-C bonds in the film can be favored to the detriment of Si-C ones. Indeed, FTIR spectra showed a decrease of the Si-C absorption band accompanied by an increase of the Si-(CH 2 ) n -Si one (998 cm − 1 ) [7]. These results are consistent with a decrease of the Si/C ratio observed in EDS (from 1.6 to 0.6).…”

Section: Film Characterizationsupporting

confidence: 85%

“…In this device (described elsewhere [7]), DC bias (V dc ) and applied power are coupled and substrates are independently heated. The cathode area is 38.5 cm 2 , leading in this work to a power density at the cathode varying from 0 to 2.78 W/cm 2 .…”

Section: Methodsmentioning

confidence: 99%

“…In a previous work [7], the chemical composition of a-Si:C:H films was analyzed for various gas residence times and DC bias values in order to highlight the effect of neutral species and energetic ions impinging on the surface during growth. FTIR measurements showed that the relative importance of Si-H (2100 cm − 1 ) and C-H (2800-3000 cm − 1 ) absorption bands compared to Si-C band (760 cm − 1 ) decreases when power or gas residence time in the reactor increases, indicating a limitation of H content in the films.…”

Section: Film Characterizationmentioning

confidence: 99%

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Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Soum‐Glaude

Thomas

Dollet

et al. 2007

Diamond and Related Materials

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Section: Film Characterizationsupporting

confidence: 85%

Section: Methodsmentioning

confidence: 99%

Section: Film Characterizationmentioning

confidence: 99%

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Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Soum‐Glaude

Thomas

Dollet

et al. 2007

Diamond and Related Materials

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“…[34] One can notice that FTIR analysis give similar results to XPS. The Si-C contribution decreases whereas the Si-N one increases with r(N 2 ).…”

mentioning

confidence: 58%

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H₂/N₂/Ar/Hexamethyldisilazane Gas Mixture

Belmahi

Bulou²,

Thouvenin

et al. 2014

Plasma Processes & Polymers

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SiCxNy:H thin films are obtained with the microwave plasma assisted chemical vapour deposition (MPACVD) method in the gas mixture H2/Ar/Hexamethyldisilazane. When very few amounts of nitrogen are added to the gas mixture, the film composition changes drastically from SiCx:H like films to SiNx:H like films, according to X‐rays Photoelectron Spectroscopy and Fourier Transform Infra‐Red Spectroscopy (FTIR) analysis. The refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75 ≤ n ≤ 2.15 and 3.5 eV ≤ Eg ≤ 5 eV) with nitrogen addition to the feed gas leading to thin films optical constants close to those of SiC or Si3N4. Therefore, for the films obtained without nitrogen, SiC nanoparticles with a size of about 20 nm embedded in an amorphous SiCN:H matrix are synthesized, leading to nanocomposite films.

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“…Films were grown on steel and crystalline (100) silicon substrates for specific analysis, in a PACVD device described in details elsewhere 3. The substrate holder is capacitively coupled to a low frequency generator (50 KHz), hence the DC bias ( V dc ) and the applied power are coupled.…”

Section: Experimental Partmentioning

confidence: 99%

Diagnostics of Ar-TMS Low Frequency Plasma in a-SiC:H Hard Film Deposition Conditions: Correlations with Film Composition and Mechanical Properties

Soum‐Glaude¹,

Thomas²,

Dollet³

et al. 2007

Plasma Process. Polym.

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a‐SiC:H films prepared by plasma‐assisted chemical vapor deposition (PACVD) are good candidates for mechanical applications as they present high hardness (H) and Young's modulus (E) as well as good resistance to wear and friction. In this work, a‐SiC:H coatings are grown from argon/tetramethylsilane [TMS: Si(CH3)4] gas mixtures in a low frequency PACVD device. The present paper is devoted to the diagnosis of the plasma discharge and aims at establishing correlations between the nature and densities of gaseous chemical species observed near the growing film surface and the corresponding material characteristics. Chemical species produced from the dissociation of the TMS precursor through SiC and CH bond breaking have been identified by performing MS measurements, which have been found consistent with our first process simulation results. Plasma power and gas mean residence time in the reactor appear to be the most influential factors. Si(CH3)3, Si(CH3)2, then SiCH3 densities increase gradually with increasing plasma power, giving rise to CC bond carriers such as C2H4, C2H2, and C2H6, and lighter species such as CH2, CH3, CH4, H, and H2. The chemical nature of the plasma is compared to the corresponding film composition characterized by X‐ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and energy dispersive spectroscopy (EDS). Film hardness and Young's modulus can be adjusted in the range [20 < H < 30 GPa, 150 < E < 225 GPa] and a friction coefficient (µ) versus steel as low as 0.16 can be obtained.

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Amorphous silicon carbide coatings grown by low frequency PACVD: Structural and mechanical description

Cited by 27 publications

References 9 publications

Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H₂/N₂/Ar/Hexamethyldisilazane Gas Mixture

Diagnostics of Ar-TMS Low Frequency Plasma in a-SiC:H Hard Film Deposition Conditions: Correlations with Film Composition and Mechanical Properties

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Amorphous silicon carbide coatings grown by low frequency PACVD: Structural and mechanical description

Cited by 27 publications

References 9 publications

Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture

Diagnostics of Ar-TMS Low Frequency Plasma in a-SiC:H Hard Film Deposition Conditions: Correlations with Film Composition and Mechanical Properties

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Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H₂/N₂/Ar/Hexamethyldisilazane Gas Mixture