Amorphous silicon based radiation detectors

Perez‐Mendez, V.; Cho, G.; Drewery, J.; Tao, Jinhui; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, Ichiro; Street, R. A.

doi:10.1016/s0022-3093(05)80360-6

Cited by 34 publications

(12 citation statements)

References 7 publications

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“…As the electric field increases, injection from the doped layer and the Poole-Frenkel effect in the high-field region (close to the p-i interface) become dominant. In order to minimize this sharp increase of leakage current with growing electric field, several solutions have been proposed in the literature: (a) An increase of the p-layer thickness [34,35], (b) the introduction of a double p-layer [36] or (c) a buried p-layer [35], or (d) the introduction of a buffer layer at the p-i interface [37].All these solutions can be easily implemented and require minimal modifications of the fabrication process. However, it is not yet clear which solution offers the lowest leakage current as interface properties (rather than the intrinsic or doped layer properties) usually play the major role in controlling leakage.…”

Section: A-si:h For Particle Detection (Detection Scheme and Requiremmentioning

confidence: 99%

“…The difficulty to achieve full collection on thick a Si:H diodes (as discussed in section 2.2) and the higher signal-to-noise ratios that could be obtained from the combination of thin a-Si:H photodiode coupled with CsI scintillator led to a shift of the interest to indirect detection scheme [36]. The integration of a Si:H photodiodes in an active matrix of a Si:H based transistors here allows for spatial detection and imaging.…”

Section: A-si:h For Particle Detection (Detection Scheme and Requiremmentioning

confidence: 99%

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Review of amorphous silicon based particle detectors: the quest for single particle detection

Wyrsch

Ballif

2016

Semicond. Sci. Technol.

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Abstract. Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas and with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

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Section: A-si:h For Particle Detection (Detection Scheme and Requiremmentioning

confidence: 99%

Section: A-si:h For Particle Detection (Detection Scheme and Requiremmentioning

confidence: 99%

Review of amorphous silicon based particle detectors: the quest for single particle detection

Wyrsch

Ballif

2016

Semicond. Sci. Technol.

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“…Since then there has been considerable research and development of this material leading to a variety of applications such as photovoltaic panels, thin film light emitting diodes, photosensors and thin film transistors [6][7][8][9][10].…”

Section: Hydrogenated Amorphous Siliconmentioning

confidence: 99%

TFA pixel sensor technology for vertex detectors

Jarron

Moraes

Despeisse

et al. 2006

Nuclear Instruments and Methods in Physics Research Section A:

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Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5 Â 10 15 p/cm 2 .

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“…For these reasons this material has attracted much attention for direct and indirect (using a scintillating layer) particle detection [2]. Using a direct detection scheme, various types of particles such as protons, neutron, electrons or X-ray were successfully detected using thick a-Si:H diode [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Amorphous Silicon Based Particle Detectors

et al. 2011

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Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micrometer spatial resolution beneficial for high accuracy beam positioning. Microchannel plates based on amorphous silicon were successfully fabricated and multiplication of electrons was observed. This material may solve some of the problems related to conventional microchannel devices. Issues, potential and limits of these detectors are presented and discussed.

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Amorphous silicon based radiation detectors

Cited by 34 publications

References 7 publications

Review of amorphous silicon based particle detectors: the quest for single particle detection

Review of amorphous silicon based particle detectors: the quest for single particle detection

TFA pixel sensor technology for vertex detectors

Amorphous Silicon Based Particle Detectors

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