TFA pixel sensor technology for vertex detectors

Jarron, P.; Moraes, D.; Despeisse, M.; Dissertori, G.; Dunand, S.; Kapłon, J.; Miazza, C.; Shah, A.; Viertel, G.; Wyrsch, Nicolas

doi:10.1016/j.nima.2005.11.242

Cited by 4 publications

(1 citation statement)

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“…Such a monolithic device facilitates the integration of the detector with the readout electronics, reduces the related noise and can almost eliminate dead areas between pixels. TFA sensors were successfully developed, aiming at the detection of singly charged particles (including MIPs) and X-rays [74,75,76,77]. Examples of TFA detectors are shown in Figure 8.…”

Section: Vertically Integrated A-si:h Detectorsmentioning

confidence: 99%

Review of amorphous silicon based particle detectors: the quest for single particle detection

Wyrsch

Ballif

2016

Semicond. Sci. Technol.

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Abstract. Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas and with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

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Section: Vertically Integrated A-si:h Detectorsmentioning

confidence: 99%

Review of amorphous silicon based particle detectors: the quest for single particle detection

Wyrsch

Ballif

2016

Semicond. Sci. Technol.

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Quantum efficiency measurement of n–i–p a-Si:H photodiode array on CMOS circuit for positron emission tomography (PET)

Nardulli

Despeisse

Dissertori

et al. 2008

Journal of Non-Crystalline Solids

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Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo-multipliers. The proposal is to develop a novel photo-sensor, which is based on vertically integrating an hydrogenated amorphous silicon (a-Si:H) film on a pixel readout chip. The a-Si:H film is deposited with a n-i-p diode structure. The ASIC (Application Specific Integrated Circuit) performs both signal amplification and readout processing. The advantage of such an approach is the extremely compact and low-cost design, together with ultra-low noise signal retrieval. In addition the a-Si:H offers the technological advantage of direct deposition on the wafer thanks to the low deposition temperature. The article presents the results of quantum efficiency measured on different types of a-Si:H photodiodes deposited on glass (DC measurement) and CMOS circuit (AC measurement). Quantum Efficiency (QE) up to 80% has been measured at the wavelength of interest for the optimized photodiodes.

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