Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Yu, Menghan; Yeh, Yung‐Hui; Cheng, Chun‐Cheng; Lin, Chang‐Yu; Ho, Geng-Tai; Lai, Bolin; Leu, Chyi‐Ming; Hou, Tuo‐Hung; Chan, Yi‐Jen

doi:10.1109/led.2011.2170809

Cited by 51 publications

(18 citation statements)

References 13 publications

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“…Herein, the CuAlO x layer is amorphous, which offers certain advantages compared with its polycrystalline counterpart, including better flexibility, lower growth temperature, and higher uniformity over a large area. 12,13 A structural diagram of the CuAlO x RRAM is shown in Fig. 1(a).…”

mentioning

confidence: 99%

Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Zhang¹,

Xu²,

Wang³

et al. 2014

Applied Physics Letters

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Resistive-switching (RS) memories with good performance and flexibility are demonstrated in p-type amorphous CuAlOx. The nature of conducting filaments (CFs) is studied via the dependence of RS behaviors on the oxygen concentration of CuAlOx. It is observed that with increasing oxygen concentration, (1) both resistance-states and switching-voltages reduce, showing an opposite trend to popular n-type oxide devices; and (2) a transition from non-degenerate to degenerate states occurs in CFs. These observations indicate that the CFs are composed of Cu-vacancy shallow acceptors. The oxygen-concentration dependence of CFs' resistance results from the change of Cu-vacancy content, rather than CFs' size or number.

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mentioning

confidence: 99%

Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Zhang¹,

Xu²,

Wang³

et al. 2014

Applied Physics Letters

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“…Among them we find vacuum sublimation of organic (small-molecule) semiconductors, and RFmagnetron sputter coating of metal-oxide semiconductors. Inorganic gate dielectrics are also frequently deposited by vacuum deposition methods, such as PECVD [93], [94], sputter coating [95], [96] and atomic layer deposition (ALD) [97]. These techniques generally afford greater control of composition and microstructure than solution-based methods.…”

Section: Vacuum-based Versus Solution-based Methodsmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.

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“…Oxide-based semiconductor thin film transistors (TFTs), such as ZnO, IGZO [1]- [5], have attracted much attention and been widely studied for high-performance display applications, owing to their high mobility, good transparency and low temperature process as compared with amorphous and poly-silicon TFTs [6]- [7]. However, most of them exhibited n-type conduction and the performance of p-type oxidebased TFTs still lag behind due to the lack of p-type oxide with high hole mobility.…”

Section: Introductionmentioning

confidence: 99%

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Shang

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we investigated the performance of an n-type tin-oxide (SnO x) thin film transistor (TFT) by experiments and simulation. The fabricated SnO x TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x10 4 , a high field-effect mobility of 18.5 cm 2 /V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO x. Furthermore, a TCAD simulation based on the n-type SnO x TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO x TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO x TFT device by channel plasma processing has considerable potential for next-generation high-performance display application. INDEX TERMS Thin film transistor (TFT), tin-oxide (SnO x), plasma, TCAD.

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Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Cited by 51 publications

References 13 publications

Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

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