Amorphous IGZO TFTs and circuits on conformable aluminum substrates

Mahmoudabadi, Forough; Ma, Xiaoxiao; Hatalis, Miltiadis K.; Shah, Kirit N.; Levendusky, Thomas L.

doi:10.1016/j.sse.2014.06.031

Cited by 9 publications

(20 citation statements)

References 23 publications

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“…78,132,147,[205][206][207] In particular, PDMS is also stretchable and biocompatible, but at the same time hard to process using standard fabrication techniques. 78,132,147,205 An alternative to polymers is constituted by metal foils, such as Al foils, 156 and stainless steel substrates. 148 The main benefit of metal foils is the high T m (above 1000 C in the case of stainless steel).…”

Section: Methodsmentioning

confidence: 99%

“…These requirements resulted in the use of different metals: Al, 77,149,152,154,157,165,170,172,179,208 Au, 38,167 Cu, 147 Mo, 41,82,137,138,148,164,168 palladium (Pd), 145 and Ti, 90,93,144,169 whereas Mo and Ti seem to exhibit the lowest specific contact resistance R C . At the same time, a big variety of multi-layer contacts have been developed to combine the advantageous properties of different materials; recent examples are: Ti/ Au, 59,69,81,84,113,140,141,143,146,150,151,[181][182][183] Ni/Au, 79 Mo/ Al, 166,173 Cr/Au, 114 Mo/AlNd, 156 Cr/Au/Cr, 92 Mo/Al/Mo, 153 Ti/Au/Ti, 162 or Ti/IZO. …”

Section: à2mentioning

confidence: 99%

“…Up to now, free-standing flexible substrates have been widely employed. 93,96,134,145,154,156,157,165,172,178,180,184,188,189,209 Free-standing foils are a natural choice for the fabrication of flexible devices because they are compatible with large-scale substrates and future roll-to-roll processes. Furthermore, the mechanical robustness of free-standing foils results in an insensitivity against mechanical shocks.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…RF and RF-magnetron sputtering have been used to deposit IGZO, 23,[80][81][82]96,132,[134][135][136]139,145,147,152,155,156,202,208 IZO, 184 GZO, 188 and ZnO. 59,78,177,178,180 Furthermore, IGZO was also deposited by DC sputtering 133,137,153,160,168 and pulsed DC sputtering.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…Also, reactive sputtering using different concentrations of Argon (Ar) and O 2 has been used to adjust the oxygen content in the metal oxide semiconducting active layer. 41,59,69,79,133,134,136,142,144,149,[154][155][156][157]159,170 An even better control of the stoichiometric composition of IGZO is possible by using co-sputtering techniques based on an IZO and a Ga 2 O 3 target. 158 Among all the n-type metal oxide semiconductors, ZnO is the only one that can be deposited by ALD, 93,139,182,183 plasma enhanced atomic layer deposition (PEALD), 179 and PLD.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

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Section: Methodsmentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

Section: Fabrication Techniquesmentioning

confidence: 99%

Section: Fabrication Techniquesmentioning

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Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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