Amorphous Ge substrates: Active or passive participants in electrical transport in ultrathin metal films?

Superconductor-insulator quantum phase transition

“…Recall that |ξ ϕ | −1 is the characteristic frequency of quantum fluctuations. Relationship (82) for the function ρ s (ω) indeed goes over into Eqn (73) as ω → 0 and at…”

“…where c d is a universal constant depending only on the dimensionality of the system. Substituting (83) into expression (82) and then into the expression for the conductivity, we obtain the desired formula for the dimensionality d = 2:…”

“…It is, however, possible that, since the thicknesses b 0 and b are comparable, the Ge layer affects the electronic spectrum or the effective concentration of electrons in the film under study. There also exist other possible variants of the influence of the Ge layer on electron transport in the main film [82]. At the same time, this is of no consequence, in a sense, since the very fact of the effect of the thickness b is beyond any doubt and quantitatively this effect can be characterized by the resistance of the film rather than by the film thickness.…”

Thermoelectric power and electrical resistance of thin, quench-condensed Sb/Au bilayers - a study of an amorphous phase at the interface

“…The physical and chemical interaction between different films deposited on top of each other has been subject to many investigations in solid-state physics. The increasing interaction between different elements during the early stage of formation of multilayers has been studied intensively by in situ investigations as a function of film thicknesses [1,2,3,4,5]. In order to keep the diffusion as small as possible one has either to concentrate on elements which are highly insoluble or to carry out the measurements for the as-quenched state at low temperatures.…”