The thermoelectric power S and the electrical conductivity sigma of amorphous AuxSb100-x films have been investigated in the temperature range between about 5 K and 350 K. A detailed experimental investigation is performed near the metal-insulator transition occurring at xc=8.1 at.%Au. For xc

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In this work we investigated the electrical properties of rapidly quenched amorphous BixSb alloys in the temperature range of 1.2 K to 345 K. The resistance reveals that for a broad range of different compositions, including that for the topological insulator (TI), a superconducting state in the amorphous phase is present. After crystallization and annealing at an intermediate temperature, we found that in pure Bi and BixSb alloys with composition corresponding to the TI, the superconductivity persists, but the transition shifts to a lower temperature. The highest superconducting transition temperature was found for pure Bi and those TI’s, with a shift to low temperatures when the Sb content is increased. After annealing at a maximum temperature of T = 345 K, the samples are non-superconducting within the experimental range and the behavior changes from semiconducting-like for pure Bi, to metallic-like for pure Sb. Transition temperature of the amorphous BixSb alloys have been calculated in the BCS–Eliashberg–McMillan framework, modified for binary alloys. The results can explain the experimental results and show that amorphous BixSb exhibits a strong to intermediate electron–phonon coupling.

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