Amorphous GaN‐Based Electroluminescent Devices Operating in UV Spectral Region

Abstract

Amorphous GaN films were deposited using a compound-source molecular beam epitaxy technique. Electroluminescent devices were also fabricated using the deposited films. The devices were operated using sine wave voltage at room temperature. One of the emission peaks was located in the UV spectral region. The deposition rate was increased by introducing a small ammonia flow.

GaN films deposited at low temperature on (111)Si by compound-source molecular beam epitaxy technique

“…It is due to the decrease of excess Ga near the surface because of its reaction with the nitrogen source. 8 Thus CS-MBE is one of the suitable growth techniques for low-temperature deposition.…”

“…9 Substrate temperature is one of the important parameters to control the N/Ga ratio in the deposited films. 10 In this study, the substrate temperature was basically kept at 450°C. Although it is under investigation what kinds of molecular beams are supplied, we speculate GaN, Ga, and N 2 are supplied to the substrate by heating GaN powders.…”

Photoluminescence spectra of GaN films grown at low temperature by compound‐source molecular beam epitaxy

“…No additional nitrogen source was introduced into the chamber during the deposition. Although the supplementation of a nitrogen source is effective for the realization of a high deposition rate [5], we want to confirm the possibility of supplementing nitrogen atoms from the GaN powder. Detailed deposition conditions were summarized in Ref.…”

“…Detailed deposition conditions were summarized in Ref. [5]. The (0001)6H-SiC substrates or glass templates were used for the deposition.…”