Photoluminescence spectra of GaN films grown at low temperature by compound‐source molecular beam epitaxy

Abstract

The photoluminescence spectra of GaN films deposited by compound-source molecular beam epitaxy (CS-MBE) at 450 °C are reported. A near band-edge emission was observed from the GaN layers grown on (0001) 6H-SiC substartes by CS-MBE at 18 K. The cathodoluminescence spectra of the deposited films and GaN powders were also observed at 20 K. The emission intensity per film thickness of the deposited films is roughly the same as that of GaN powders. Electroluminescent devices were fabricated using the deposited films, and a UV light emission was observed from these devices.