Amorphous carbon coating for improving the field emission performance of SiC nanowire cores

Zhang, M.; Li, Zhenjiang; Zhao, Jian; Guo, Lihong; Meng, Alan; Liu, X. L.; Fan, Xiaoming; Qi, Xiaowei

doi:10.1039/c4tc01658k

Cited by 42 publications

(22 citation statements)

References 42 publications

(31 reference statements)

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“…In the last couple of decades, large number of new materials and composites have been studied to reveal their field emission performance including different metals, semiconductors, metal oxides, sulfides, carbides, nitrides, ferrites, perovskite solids, hexaborides, and so on. Apart from these materials, low‐dimensional materials are getting significant attention recently.…”

Section: Enhancement (Sources)mentioning

confidence: 99%

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Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

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Artificial intelligence platforms, high-speed computation, and data handling systems increasingly need energy-efficient systems. Electron emission was fundamental to the development of transistors and electronics over seven decades ago. This technology has a renewed emergence and includes implications in diverse fields ranging from electronics, telecommunication, defense, space exploration, medical science, and material science to televisions and displays. For such a vital field, a critical review of theories, current research directions, applications, and future prospects is invaluable. Herein, the ongoing research directions adopted to enhance the emitter performance are reviewed and the relative degree of their success is compared. This is supported by an overview of key electron emission, transport mechanisms, and ways to tune a particular mechanism for energy-efficient applications. The diverse range of applications in this field, with a particular focus on electronics, is outlined. Exciting current developments in electron field emission that could revolutionize the electronic industry with a resurgence of nanoscale field emission transistor in the air medium are also discussed. Figure 2. Representation of different electron emission mechanisms: a) Comparison of thermionic emission, Schottky emission, FN tunnelling, and direct tunnelling with schematic energy band diagram. b) Typical thermionic emission plot. c) Typical Schottky plot. (b,c)Reproduced with permission. [3]

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Section: Enhancement (Sources)mentioning

confidence: 99%

“…The Ohmic contact and the two‐stage field enhancement together increase the overall field emission performance. A few more recent studies in this domain are cited here and some significant studies are listed in Table .…”

Section: Enhancement (Sources)mentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

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“…Compared to the bulk counterparts, one-dimensional (1D) SiC nanomaterials possess even more unique morphology features and outstanding electrical–mechanical properties because of their low dimensionality, quantum confinement, and shape effect, which also make them very promising for use in electron emitters [7,8,9,10,11,12], sensitive sensors [13,14,15,16,17,18], and so on. Compared with other 1D nanostructure emitters [19,20], SiC nanowires have low turn-on fields, low threshold fields, and good current emission stabilities for its high field enhancement factor, low electron affinity, excellent mechanical properties, and high chemical stability [21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

et al. 2019

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The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.

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“…There has been an extensive study of the field emission (FE) from nanostructured emitters in previous decades, for their potential use in the flat‐panel displays, high‐resolution electron‐beam instruments, electron microscopes, X‐ray tubes, etc . Among the field emitter communities, silicon carbide (SiC) has been proved as one of the pivotal and outstanding FE cathode candidates, for its low thermal‐shock resistance and thermal‐expansion coefficient, high electron mobility and low electron affinity, etc . In addition, SiC has excellent mechanical properties, high chemical stability, and thermal conductivity, which make it an ideal candidates for surviving harsh working conditions, for instance at high powers, high temperatures as well as high voltages .…”

Section: Introductionmentioning

confidence: 99%

Large‐scale growth of patterned SiC nanowire arrays and their field emission performance

2019

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Fabrication of patterned one-dimensional (1D) nanostructures was recognized as the key process for the construction of functional display devices. In current investigation, we put forward the large-scale and uniform growth of patterned 3C-SiC nanowire arrays assisted by the patterned Au catalysts on SiC wafer substrate. The as-fabricated SiC nanowires presented tapered configuration with a typical bamboolike body as well as clear and sharp tips. The as-fabricated SiC nanoarray cathode has outstanding field emission (FE) characteristic that has a low turn-on field (E to ) of ~ 1.54 V/μm. The mechanism for their electron emission behaviors has been proposed.

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Amorphous carbon coating for improving the field emission performance of SiC nanowire cores

Abstract: Amorphous carbon-decorated SiC nanowires with a turn-on field of 0.5 V μm−1 have been obtained, and the electrical transport mechanism is illustrated.

Cited by 42 publications

References 42 publications

Electron Emission Devices for Energy‐Efficient Systems

Electron Emission Devices for Energy‐Efficient Systems

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

Large‐scale growth of patterned SiC nanowire arrays and their field emission performance

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