Amorphization of silicon by ion irradiation in dense plasma focus

Sadiq, Muhammad; Shafiq, Muhammad; Waheed, A.; Ahmad, Riaz; Zakaullah, M.

doi:10.1016/j.physleta.2005.11.058

Cited by 38 publications

(23 citation statements)

References 23 publications

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“…The melt layer is subjected to external forces such as surface tension, gradients of plasma pressure and others. Melt motion driven by external forces produces significant macroscopic erosion of materials [5].…”

Section: Resultsmentioning

confidence: 99%

“…Plasma focus discharges are known as a remarkable source of hot plasma bunches and fast streams, fast neutrons proceeding from deuterium reactions, hard and soft X-rays, coming from different gases and the anodes in the discharge chamber, and energetic particles such as ions and electrons due to m=0 instabilities which may produce disruptions in plasma column for several nanoseconds. The spatial charge separation as well as the rapid change in the system inductance can generate strong electric fields that accelerate ions toward the top of the chamber and electrons toward the positively charged anode [1][2][3][4][5]. One of the main issues in the field of nuclear fusion research is the engineering design of structural materials.…”

Section: Introductionmentioning

confidence: 99%

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Study of dense plasma-surface interaction by a Filippov type plasma focus device

2008

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In this paper we have tried to investigate of dense plasma-material interaction in a Filippov type plasma focus (90KJ, 25KV, 288µf) facility. Dense plasma focus discharges are known as a remarkable source of hot plasma bunches and fast streams, fast neutrons, hard and soft X-rays, and energetic particles such as ions and electrons. The Aluminum made targets with 20cm in diameter and thickness 5mm, were placed at the central part of plasma focus cathode. These targets were exposed to perpendicular dense high temperature plasma stream incidence. The working gases for these experiments were Argon, Deuterium +Krypton, Helium, and pure Deuterium. We took advantage of changeable targets surface and used SEM technique for analyzing irradiated samples by various working gases. As it shown from SEM pictures and surface profiles, melt layer erosion by melt motion, surface smoothing, and bubble formation were some of different effects caused by diverse working conditions.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of dense plasma-surface interaction by a Filippov type plasma focus device

2008

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“…10) and corresponds to the increase of the short-range order. This result is probably due to the relaxation of amorphous network during which the bond-angle fluctuation decreases [18]. According to [18] a FWHM of ∼ 70 cm −1 corresponds to fully relaxed amorphous silicon with only ∼ 10% distortion of the bond angles.…”

Section: Structure and Microstructure By Raman Scatteringmentioning

confidence: 96%

“…This result is probably due to the relaxation of amorphous network during which the bond-angle fluctuation decreases [18]. According to [18] a FWHM of ∼ 70 cm −1 corresponds to fully relaxed amorphous silicon with only ∼ 10% distortion of the bond angles. Additionally, we observed the shift of the peak position of the TO-like peak atν ∼ 480 cm −1 to higher wavenumbers with increasing the deposition temperature.…”

Section: Structure and Microstructure By Raman Scatteringmentioning

confidence: 96%

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Müllerová¹,

Fischer²,

Netrvalová³

et al. 2011

Open Physics

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Abstract:The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50 − 200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network. We found out that the scale factor of the Tauc plot increases with the deposition temperature. This behaviour can be attributed to the increasing ordering of silicon hydride regions. The Tauc band gap energy, the iso-absorption value their difference were not particularly influenced by the deposition temperature. Improvements of the microstructure of the Si amorphous network have been deduced from the analysis.

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“…Another distinct advantage of this technique is that the substrate needs not to be electrically conductive. Thus many of the insulators and semiconductors can be used for surface modification [4][5][6]. This technique, when used for material processing purposes especially in thin film deposition gives the advantages of labour savings, less treatment time, significant reduction in energy consumption over the other methods [7,8].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Diamond-like Carbon Films using Graphite Sputtering in Neon Dense Plasma

Zeb

Qayyum

Sadiq

et al. 2007

Plasma Chem Plasma Process

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This paper reports the deposition of diamond-like carbon (DLC) films on Si <100>, using a low energy (1.45 kJ) dense plasma focus assisted sputtering of graphite insert at the tip of the tapered anode. The substrates are placed in front of the anode at different axial and angular positions and are exposed to multiple focus shots. The information regarding the DLC structure is acquired by using Raman spectroscopy. The spectra are characterized by two broad bands known as ''G-band'' and ''D-band''. The results point towards the formation of DLC films with both sp 3 (diamond like) and sp 2 (graphite like) domains. In X-ray diffraction (XRD) pattern, no additional peak is observed except a peak at 2h = 69°which corresponds to the silicon (Si) substrate. The intensity of Si peak is reduced after treatment indicating the deposition of amorphous carbon. Scanning electron microscopy (SEM) results demonstrate that the smoothness of the film increases with increasing the substrate angular positions with respect to the anode axis. Energy dispersive X-ray (EDX) analysis reveals that the films deposited at lower axial and angular positions are thicker which is complemented by the cross-sectional views of the films.

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Amorphization of silicon by ion irradiation in dense plasma focus

Cited by 38 publications

References 23 publications

Study of dense plasma-surface interaction by a Filippov type plasma focus device

Study of dense plasma-surface interaction by a Filippov type plasma focus device

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Deposition of Diamond-like Carbon Films using Graphite Sputtering in Neon Dense Plasma

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