Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Kucharski, Robert; Zając, M.; Puchalski, A.; Sochacki, Tomasz; Boćkowski, Michał; Weyher, J.L.; Iwińska, Małgorzata; Serafińczuk, J.; Kudrawiec, R.; Siemiątkowski, Zbigniew

doi:10.1016/j.jcrysgro.2015.06.019

Cited by 16 publications

(6 citation statements)

References 20 publications

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“…Native GaN crystals, often HVPE-GaN, are mainly used as seeds in the ammonothermal growth method. It is not necessary to prepare the surface of the seed to an epi-ready state before growth [5,32]. Proper changes in temperature and ammonia pressure lead to etching the surface by the solution before the growth (back etching procedure).…”

Section: Hvpe Versus Ammonothermal Growth Methodsmentioning

confidence: 99%

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Boćkowski

Iwińska

Amilusik

et al. 2016

Semicond. Sci. Technol.

122

104

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Homoepitaxial growth of high structural quality and high-purity thick gallium nitride layers by crystallization from vapor phase (hydride vapor phase epitaxy (HVPE)) on 1, 1.5, and 2 inch substrates obtained by a solution (ammonothermal) growth method is presented. Advantages and disadvantages of both growth technologies are described in detail. Structural, optical, electrical, and thermal properties of gallium nitride grown from the vapor phase are demonstrated and compared to properties of ammonothermally grown material. It is shown that a synergy of these two methods can create new opportunities for an efficient production of bulk gallium nitride crystals and then substrates. It is also shown that free-standing (products of slicing procedures) gallium nitride crystals obtained from growth by vapor phase on ammonothermal substrates can be successfully used as seeds for the next growth process by both discussed methods. Factors limiting HVPE and making it a 'wafer to wafer' technology are presented, clarified, and analyzed. Intentional introduction of silicon to growth of gallium nitride by HVPE and crystals with a high free carrier concentration and high structural quality are demonstrated. First electronic and optoelectronic devices fabricated on the free-standing gallium nitride substrates are shown.

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Section: Hvpe Versus Ammonothermal Growth Methodsmentioning

confidence: 99%

“…Additionally, F-S HVPE-GaN can be successfully used as seed material in an ammonothermal growth process. In this case the growth is carried out on the (000-1) surface of the F-S HVPE-GaN seed [32]. New-grown Am-GaN is of high structural quality.…”

Section: Hvpe Growth On Ammono-gan Seedsmentioning

confidence: 99%

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Boćkowski

Iwińska

Amilusik

et al. 2016

Semicond. Sci. Technol.

122

104

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“…Ammonothermal GaN boasts the highest crystalline quality in the field but unintentional doping can be a problem [4]. Work is being done in order to combine the best qualities of both methods [5,6].…”

Section: Introductionmentioning

confidence: 99%

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

et al. 2017

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GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n-and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to~1 µm at n~10 20 cm −3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1-10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10 18 cm −3 are highly transparent with the absorption coefficient below 3 cm −1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

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“…The thickness of freestanding AT GaN samples was 400-450 μm. The AT GaN crystals contained the dislocation density less than 10 5 cm -2 [28,29]. In order to emulate the evolution of particle detector functionality during experiments at the LHC, it is preferable to use the reactor neutron irradiation, since homogeneous damage thereby can easily be achieved.…”

Section: Samplesmentioning

confidence: 99%

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

Pavlov

Čeponis

Deveikis

et al. 2020

physics

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In this work, pulsed photoionization as well as photoluminescence and positron annihilation spectroscopy were combined to detect different species of defects. The GaN crystals, grown by the ammono-thermal method, doped with Mn as well as Mg impurities and irradiated with different fluences of reactor neutrons, were examined to clarify the role of the technological and radiation defects. The evolution of the prevailing photoactive centres was examined by pulsed photoionization spectroscopy. Positron annihilation spectroscopy was applied to reveal vacancy-type defects.

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Cited by 16 publications

References 20 publications

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

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