Ammonium ion detection in solution using vertically grown ZnO nanorod based field-effect transistor

Ahmad, Rafiq; Tripathy, Nirmalya; Khan, Muhammad Yasir; Bhat, Kiesar Sideeq; Ahn, Min-Sang; Hahn, Yoon‐Bong

doi:10.1039/c6ra09731f

Cited by 65 publications

(26 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[7][8][9][10][11] Therefore, they have been applied in ultraviolet photodetectors, [12][13][14][15][16] eld electron emission displays, 17 and eld effect transistors (FETs). [18][19][20] Hydrothermally grown ZnO nanorods have been used in FETs because of their low temperature growth, tunable growth behavior, and electrical property. 21,22 However, generally, ZnO nanorod FETs exhibit the problem of low on-current, which affects their practical applications.…”

Section: Introductionmentioning

confidence: 99%

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Zhu

Wen

et al. 2017

RSC Adv.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Zhu

Wen

et al. 2017

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…Moreover, their application in devices, such as field-effect transistors, 19,20 ultraviolet (UV) photosensors, 21,22 UV light-emitting diodes, 23 glucose sensors, 24,25 varistors, 26 gas sensors, 27 laser diodes, 28 surface acoustic wave (SAW) devices, 29 solar cells, 30,31 memory devices, 32,33 and field emission (FE) devices, 34 is promising. In recent years, FE devices have gained widespread attention for their application in flat-panel displays and other electronic devices, such as microwave amplifiers, high-brightness electron-source X-ray tubes, cathode-ray tube monitors, and electron microscopes.…”

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

View full text Add to dashboard Cite

In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

show abstract

“…S1(f) shows the lattice spacing measurements for dark and white regions as 2.32 Å, and 2.5 Å, respectively which confirm the presence of Au (111) and CuO (002). Bright field TEM image of CuO NWs has been shown in [40][41][42] . The XPS of Cu 2p core level is expressed in Fig.…”

Section: Resultsmentioning

confidence: 99%

Au nanoparticles modified CuO nanowire electrode based non-enzymatic glucose detection with improved linearity

Mishra

Jarwal

Mukherjee

et al. 2020

Sci Rep

View full text Add to dashboard Cite

This paper explores gold nanoparticle (GNP) modified copper oxide nanowires(CuO NWs)based electrode grown on copper foil for non-enzymatic glucose detection in a wide linear ranging up to 31.06 mM, and 44.36 mM at 0.5 M NaOH and 1 M NaOH concentrations. The proposed electrode can be used to detect a very low glucose concentration of 0.3 µM with a high linearity range of 44.36mM and sensitivity of 1591.44 µA mM−1 cm−2. The electrode is fabricated by first synthesizing Cu (OH)2 NWs on a copper foil by chemical etching method and then heat treatment is performed to convert Cu (OH)2 NWs into CuO NWs. The GNPs are deposited on CuO NWs to enhance the effective surface-to-volume ratio of the electrode with improved catalytic activity. The surface morphology has been investigated by XRD, XPS, FE-SEM and HR-TEM analysis. The proposed sensor is expected to detect low-level of glucose in urine, and saliva. At the same time, it can also be used to measure extremely high sugar levels (i.e. hyperglycemia) of ~ 806.5454 mg/dl. The proposed sensor is also capable of detecting glucose after multiple bending of the GNP modified CuO NWs electrode. The proposed device is also used to detect the blood sugar level in human being and it is found that this sensor’s result is highly accurate and reliable.

show abstract

Ammonium ion detection in solution using vertically grown ZnO nanorod based field-effect transistor

Abstract: Vertically aligned ZnO nanorods based fabricated FET providing a well-defined large surface area for ammonium ion detection in solution.

Cited by 65 publications

References 39 publications

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Au nanoparticles modified CuO nanowire electrode based non-enzymatic glucose detection with improved linearity

Contact Info

Product

Resources

About