Ambipolar Surface Conduction in Ternary Topological Insulator Bi2(Te1–xSex)3 Nanoribbons

Wang, Zhenhua; Qiu, Richard L.J.; Lee, Chee Huei; Zhang, Zhidong; Gao, Xuan

doi:10.1021/nn304684b

Cited by 38 publications

(32 citation statements)

References 33 publications

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“…8,9 The growth of the TIs, Bi 2 Se 3 /Te 3 , in 2D and nanoform, has been well investigated and reported. [10][11][12] Nanomaterials of the first TCI, SnTe, has also been reported by us in our previous work and by others. [13][14][15] The nanomaterial growth was achieved using a vapour-liquid-solid (VLS) growth technique as this is a proven technique for obtaining high quality nanomaterials.…”

supporting

confidence: 82%

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe

Saghir

Sanchez

Hindmarsh

et al. 2015

Crystal Growth & Design

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Topological insulators (TIs) and topological crystalline insulators (TCIs) exhibit exotic surface properties. We present optimized growth procedures to obtain high quality bulk crystals of the TCIs Pb1–x Sn x Te and Pb1–x Sn x Se, and nanowires from the bulk crystals using the vapor–liquid–solid (VLS) technique. Nanowires of Pb1–x Sn x Te have been produced with a Sn composition of x = ∼ 0.25, at which a transition from trivial to nontrivial insulator is reported. The results obtained on the growth of nanomaterials of Pb1–x Sn x Se are also described. Detailed characterization of the bulk crystals and the nanomaterials through X-ray diffraction, microscopy techniques, and EDX analysis are presented.

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supporting

confidence: 82%

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe

Saghir

Sanchez

Hindmarsh

et al. 2015

Crystal Growth & Design

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“…This prominent bulk contribution is related to the excess carriers in bulk due to Se vacancies in Bi 2 Se 3 . To reduce the excess carriers, chemical doping1213 and carrier exhaustion by applying a gate voltage141516 are proved to be efficient methods. However, low bulk carrier concentration is still insufficient to make surface states overwhelm the bulk in magnetotransport measurements, because the expected signals from the surface states are always accompanied by a large positive magnetoresistance (MR) background17.…”

mentioning

confidence: 99%

High-Mobility Bi2Se3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls

Yan

Wang

et al. 2014

Sci Rep

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Magnetotransport measurements of topological insulators are very important to reveal the exotic topological surface states for spintronic applications. However, the novel properties related to the surface Dirac fermions are usually accompanied by a large linear magnetoresistance under perpendicular magnetic field, which makes the identification of the surface states obscure. Here, we report prominent Shubnikov-de Haas (SdH) oscillations under an in-plane magnetic field, which are identified to originate from the surface states in the sidewalls of topological insulator Bi2Se3 nanoplates. Importantly, the SdH oscillations appear with a dramatically weakened magnetoresistance background, offering an easy path to probe the surface states directly when the coexistence of surface states and bulk conduction is inevitable. Moreover, under a perpendicular magnetic field, the oscillations in Hall conductivity have peak-to-valley amplitudes of 2 e2/h, giving confidence to achieve a quantum Hall effect in this system. A cross-section view of the nanoplate shows that the sidewall is (015) facet dominant and therefore forms a 58° angle with regard to the top/bottom surface instead of being perpendicular; this gives credit to the surface states' behavior as two-dimensional transport.

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“…Similar work has been done in the Bi 2 (Se x Te 1‐ x ) 3 system . Inspired by the concept of “composition tuning” in the source materials, further related work has been carried out . Studies regarding quaternary systems, such as Bi 2‐ x Sb x Te 3‐ y Se y , have also been reported.…”

Section: Specific Approaches For Synthesizing Ti Nanostructures With mentioning

confidence: 95%

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

Guo

Liu

Peng

2015

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The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.

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Ambipolar Surface Conduction in Ternary Topological Insulator Bi₂(Te_1–xSe_x)₃ Nanoribbons

Cited by 38 publications

References 33 publications

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe

High-Mobility Bi2Se3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

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Ambipolar Surface Conduction in Ternary Topological Insulator Bi2(Te1–xSex)3 Nanoribbons

Cited by 38 publications

References 33 publications

Nanomaterials of the Topological Crystalline Insulators, Pb1–xSnxTe and Pb1–xSnxSe

Nanomaterials of the Topological Crystalline Insulators, Pb1–xSnxTe and Pb1–xSnxSe

High-Mobility Bi2Se3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

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Ambipolar Surface Conduction in Ternary Topological Insulator Bi₂(Te_1–xSe_x)₃ Nanoribbons

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe

Nanomaterials of the Topological Crystalline Insulators, Pb_1–xSn_xTe and Pb_1–xSn_xSe