Ambipolar SnOx thin-film transistors achieved at high sputtering power

Liu, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiaye; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin

doi:10.1063/1.5022875

Cited by 23 publications

(15 citation statements)

References 27 publications

(28 reference statements)

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“…After the evaporation of gate metal (Ni/Au), the AlGaN/ GaN HEMTs with p-SnO gate cap were fabricated. Particularly, the room-temperature sputtering and low-temperature air annealing method for p-SnO, proposed in our previous work [45], is perfectly compatible to the fabrication of GaN-based HEMTs. In addition, the metal gate HEMT has also been fabricated except for the p-SnO cap deposition, and the corresponding electrical properties can be found in Fig.…”

Section: Experimental Verification Of P-sno Gate Cap Hemtmentioning

confidence: 92%

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

et al. 2021

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p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT); however, the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance. Thus, the more cost-effective cap layer has attracted wide attention in GaN-based HEMT. In this paper, p-type tin monoxide (p-SnO) was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment. Simulation results show that by simply adjusting the thickness (50 to 200 nm) or the doping concentration (3 × 10 17 to 3 × 10 18 cm −3 ) of p-SnO, the threshold voltage (V th ) of HEMT can be continuously adjusted in the range from zero to 10 V. Simultaneously, the device demonstrated a drain current density above 120 mA mm −1 , a gate breakdown voltage (V BG ) of 7.5 V and a device breakdown voltage (V B ) of 2470 V. What is more, the etching-free AlGaN/ GaN HEMT with sputtered p-SnO gate cap were fabricated, and achieved a positive V th of 1 V, V BG of 4.2 V and V B of 420 V, which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT. This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.

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Section: Experimental Verification Of P-sno Gate Cap Hemtmentioning

confidence: 92%

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

et al. 2021

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“…SnO has also been known as the only oxide material that exhibits an ambipolar behavior, and there are many reports of this ambipolar behavior in SnO TFTs. [54][55][56][57][58] Luo et al showed the importance of back-channel surface of SnO on its ambipolar behavior, which demonstrated that the chemical passivation effectively reduces the subgap states and thereby enables the facile shift of Fermi-level by the applied gate voltage, achieving the ambipolar behavior in the SnO TFTs. [54] Similarly, Lee et al investigated the switching mechanism of SnO TFTs by performing back-channel defect engineering.…”

Section: Critical Issuesmentioning

confidence: 99%

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Kim

Jeong

2021

Physica Rapid Research Ltrs

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Oxide semiconductors are considered as one of the most promising candidates for back‐end‐of‐line transistors for monolithic 3D integration due to various advantages, such as complementary metal–oxide–semiconductor (CMOS)‐compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p‐type oxide semiconductors that are comparable to their n‐type oxide counterparts is increasing. However, the inferior electrical characteristics of p‐channel field‐effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high‐performance p‐type oxide semiconductors is essential for their implementation in next‐generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p‐type oxide semiconductors fabricated via CMOS‐compatible methods are reviewed from a material science and device physics perspective, and a brief history of p‐type oxide semiconductors is discussed. Furthermore, critical issues for p‐type oxide semiconductors, such as the transport mechanism, bias stress stability, high off‐current, and ambipolar behavior, are discussed.

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“…One of them is performed by creating Sn vacancies, which can introduce a hole carrier to the valence band of SnO 2 , commonly attained by controlled sputtering method deposition. [ 14 ] The other way is by chemical doping with group IIIA elements such as indium (In) and gallium (Ga), which can occupy an Sn site in the SnO 2 lattice. [ 15 ] Based on those earlier reports, we have fabricated a SnO 2 TFT by choosing LiInO 2 and LiGaO 2 as ion‐conducting oxide dielectrics, which can dope In and Ga atoms, respectively, to the interfacial layer of SnO 2 .…”

Section: Figurementioning

confidence: 99%

“…One of them is to create Sn vacancies which can introduce hole carrier to the valance band of SnO 2 which is commonly achieved by sputtering method deposition. [36][37][38] The other way is by chemical doping with group IIIA elements like indium (In), gallium (Ga) which can occupy a Sn site in the SnO 2 lattice. [39][40][41][42] Based on those earlier reports, we have fabricated SnO 2 TFT by choosing two ion-conducting oxide dielectrics that can introduce p-doping to the dielectric/semiconductor interface to enhanced hole conduction of SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

Chourasia

Sharma

Pal

et al. 2020

Physica Rapid Research Ltrs

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Complementary metal-oxide-semiconductor (CMOS) technology is used prevalently for constructing different integrated circuits in microprocessors, microcontrollers, static RAM, image sensors, data converters, and highly integrated transceivers in various types of communications. [1] An ambipolar thin-film transistor (TFT) provides both electron and hole conduction in a single TFT, which is a unique choice for high-density CMOS fabrication. [2] In addition to this CMOS fabrication, ambipolar charge transport of TFTs is widely used for developing lightemitting transistors, [3] flash memories, [4] and artificial synaptic emulation. [5] To date, most reported thin-film ambipolar transistors have been fabricated by using small organic molecule and polymer semiconductors. [6,7] However, the main difficulties of these organic small-molecule/polymerbased TFTs are their low carrier mobility and poor atmospheric stability for electron transport. [2] In contrast, low-cost solutionprocessed metal-oxide-semiconductors exhibit relatively excellent environmental stability and higher carrier mobility. Moreover, the operating voltage of metaloxide TFTs can be reduced to 2.0 V by using a high-κ gate dielectric, such as Ta 2 O 5 , [7] ZrO 2 ,or [8] HfO x. [9] Therefore, it is of utmost importance to develop highperformance, low-operating-voltage, oxide ambipolar TFTs by a solution-processed technique. To date, ion-conducting oxide dielectrics show the best performance in lowering the operating voltage of oxide TFTs due to their high capacitance value, which originates from the mobile ion of the dielectric thin film. [10,11] However, the main obstacle is to find out a high-performance hole transport metal-oxide-semiconductor. [12] So far, SnO and SnO 2 have shown some potential. [13] Similar to various metaloxide-semiconductors, tin oxide (SnO 2) is commonly found as an n-type semiconductor. However, the p-type SnO 2 could be formed by introducing a hole carrier in its valence band. Until now, there are two established methods to achieve this hole transport phenomenon in SnO 2 semiconductors. One of them is performed by creating Sn vacancies, which can introduce a hole carrier to the valence band of SnO 2 , commonly attained by controlled sputtering method deposition. [14] The other way is by chemical doping with group IIIA elements such as indium (In) and gallium (Ga), which can occupy an Sn site in the SnO 2 lattice. [15] Based on those earlier reports, we have fabricated a SnO 2 TFT by choosing LiInO 2 and LiGaO 2 as ion-conducting oxide dielectrics, which can dope In and Ga atoms, respectively, to the interfacial layer of SnO 2. To identify the differences, we have also chosen Li 2 ZnO 2 as a third ionic dielectric containing a divalent Zn atom, which is unable to introduce holes in SnO 2. A comparative electrical characterization shows a clear n-channel

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Ambipolar SnOx thin-film transistors achieved at high sputtering power

Cited by 23 publications

References 27 publications

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

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