Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

Liang, Lingyan; Cao, Hu; Chen, Xiaobo; Liu, Zhi Min; Zhuge, Fei; Luo, Hao; Li, Jun; Lu, Yi; Lu, Wei

doi:10.1063/1.4731271

Cited by 97 publications

(112 citation statements)

References 25 publications

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“…While for V dd at 3.0 V, the voltage gain arrives at $20. It was reported that the depletion loaded inverter exhibited a voltage gain of $20 at V dd of 9 V, 26 while the complementary inverter exhibits voltage gain of $20 at V dd of 30 V. 27 In our case, a high voltage gain of $20 could be obtained at a low supply voltage of only 3 V, which indicates the high potential for the proposed inverter in portable applications. Furthermore, the transition width values are also extracted from VTCs, as shown in Fig.…”

Section: Resultsmentioning

confidence: 50%

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Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Chao

Zhu

Xiao

et al. 2015

Journal of Applied Physics

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Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 107, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm2/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

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Section: Resultsmentioning

confidence: 50%

“…It should be noted here that the transition width is below 0.5 V. Such value is also much lower than that for the reported inverters. 26,27 The narrow transition width could be expected to improve the response characteristics of logic circuit. …”

Section: Resultsmentioning

confidence: 99%

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Chao

Zhu

Xiao

et al. 2015

Journal of Applied Physics

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“…To realize complementary inverters, one can either combine an n-type TFT and a p-type TFT or use two ambipolar TFTs. A rail-to-rail output voltage behavior can be easily achieved in the former but hard to achieve in latter case because neither of the two ambipolar TFTs can be fully switched off [8,9,10,11]. The static current will also result in a static power consumption, which may be an issue in the case of large scale integration.…”

Section: Introductionmentioning

confidence: 99%

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Liu

Yang

Wang

et al. 2018

IEEE Electron Device Lett.

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“…Cao and co-workers [83][84][85]88,89 favour a two-step process involving the electron beam evaporation (EBE) of SnO 2 on p-type silica, followed by thermal annealing at temperatures between 300 and 600 C. Conversely, the epitaxial process , 90 respectively. However, unlike the latter approaches, EBE and PLD are suggested to be less amenable to large-scale device production.…”

Section: 85mentioning

confidence: 99%

Understanding the defect chemistry of tin monoxide

et al. 2013

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Tin monoxide has garnered a great deal attention in the recent literature, primarily as a transparent p-type conductor. However, due to its layered structure (dictated by non-bonding dispersion forces) simulation via density functional theory often fails to accurately model the unit cell. This study applies a PBE0-vdW methodology to accurately predict both the atomic and electronic structure of SnO. Empirical van der Waals corrections improve the structure, with the calculated c/a ratio matching experiment, while the PBE0 hybrid-DFT method gives accurate band gaps (0.67 and 2.76 eV for the indirect and direct band gaps) and density of states which are in agreement with experimental spectra. This methodology has been applied to the simulation of the native intrinsic defects of SnO, to further understand the conductivity. The results indicate that n-type conductivity will not arise from intrinsic defects and that donor doping would be necessary. For p-type conduction, the Sn vacancy is seen to be the source, with the 0/À1 transition level found 0.39 eV above the valence band maximum. By considering the formation energies and transition levels of the defects at different chemical potentials, it is found that the p-type conductivity is sensitive to the O chemical potential. When the chemical potential is close to its lowest value (À2.65 eV here), the oxygen vacancy is stabilized which, whilst not leading to n-type conduction, could reduce p-type conduction by limiting the formation of hole states.

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Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

Cited by 97 publications

References 25 publications

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Understanding the defect chemistry of tin monoxide

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