Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Liu, Yunpeng; Yang, Jin; Wang, Yiming; Ma, Pengfei; Yuan, Yazhou; Zhang, Jiaye; Lin, Zhaojun; Zhou, Li; Xin, Qian; Song, Aimin

doi:10.1109/led.2017.2786237

Cited by 52 publications

(36 citation statements)

References 24 publications

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“…Pmax is found to be as low as 15.6~241.2 nW at VDD of 1.5~3.0 V, indicating rather low power consumption during switching. Figure 3(c) summarizes the VDD of the above mentioned reported inverters [13][14][15][16][17][18][19][20][26][27][28][29][30][31][32][33][34][35][36][37][38][39], commonly in range of 2~100 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 F o r P e e r R e v i e w V. Our inverter has realized the lowest VDD of 1.5 V, with yet high performance. Such low VDD lead to significantly low power consumption.…”

Section: Methodsmentioning

confidence: 99%

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Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Yuan

Yang

et al. 2018

IEEE Electron Device Lett.

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Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we report complementary inverters based on p-type tin monoxide and n-type indium-gallium-zinc-oxide thin-film transistors. The inverters have a gain of 63 at a supply voltage, VDD, of 1.5 V with a maximum static power consumption of 15.6 nW, and a gain of 226 at a VDD of 3.0 V with a maximum power consumption of 241.2 nW. A five-stage ring oscillator (RO) based on the complementary inverters are able to operate at 1.04 kHz, with full amplitude oscillations at a VDD of 1.5 V. All the inverters and RO are fabricated on silicon wafers but at a maximum processing temperature of 225 o C, so that the results are relevant to possible flexible applications. The extremely low power consumption of nanowatt, high gain, kHz operation, and possible flexibility of the fabricated complementary components are well suited to meet the requirements of wearable electronics, internet of things technology, etc. Index Terms-Complementary inverter, indium gallium zinc oxide (InGaZnO or IGZO), tin monoxide (SnO), low-power, high gain, ring oscillator (RO), thin-film transistor (TFT).

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Section: Methodsmentioning

confidence: 99%

“…Thereby, complementary inverters based on p-type SnO and n-type oxides, e.g. IGZO, are highly desirable for the next generation of flexible/transparent circuits with low supply voltages high performance [26][27][28].…”

mentioning

confidence: 99%

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Yuan

Yang

et al. 2018

IEEE Electron Device Lett.

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“…Unfortunately, relevant devices have not been demonstrated yet . Thus, developing p‐type inorganic semiconductors with high carrier mobility and device stability becomes of paramount importance for high performance oxide‐based electronics and optoelectronics …”

Section: Introductionmentioning

confidence: 99%

High‐Performance P‐Type Copper(I) Thiocyanate Thin Film Transistors Processed from Solution at Low Temperature

Lee

et al. 2019

Adv Materials Inter

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Semiconducting copper(I) thiocyanate (CuSCN) is actively studied for electronic and optoelectronic applications. Although various kinds of CuSCN‐based transistors are reported, these devices suffer from low charge carrier mobility of about 0.01–0.1 cm2 V−1 s−1. Here, ion gel electrolyte consisting of network polymer and ionic liquid is used as a high capacitance gate insulator to achieve high performance CuSCN‐based electrolyte‐gated transistors (CuSCN‐EGTs) with low operation voltage below 1 V. 30 nm thick CuSCN semiconductor film can be formed by a simple solution process with a low processing temperature (≈100 °C) that is directly applicable to flexible plastic substrates. By doping copper iodide to the CuSCN semiconductor, device performance including drain current and charge carrier mobility of the CuSCN EGT can be improved significantly. The measured charge carrier mobility of ≈0.3 cm2 V−1 s−1 is the highest among the reported CuSCN transistors using various gate insulators. These CuSCN‐EGTs also display good operation stability under continuous quasistatic external gate voltage sweeps. Such superior electrical performance and versatile processability of ion gel–gated CuSCN transistors make them suitable for use in complimentary circuits and large‐area flexible electronics.

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“…The first IGZO/SnO complementary inverter was demonstrated in 2017 with a gain of around 25 [16] , as shown in Figures 4(a) and 4(b). Then some improved IGZO/SnO inverters [10,11] , NAND [12] , NOR [13] , and XOR [13] gates were demonstrated in the following years. By cascading these basic logic gates, we have also realized a D-latch (Figure 4(c)) [13] , a 1-bit full-adder (Figure 4(d)) [13] , and RAM (Figure 4(e)) [14] based on IGZO and SnO TFTs.…”

Section: Cmos Electronicsmentioning

confidence: 99%

“…Here, we review our recent work on a) high-performance oxidebased Schottky diodes with an ideality factor of 1.09, ultra-low noise, and operating speed >20 GHz on glass [2] and 2.45 GHz on flexible substrate [3] ; b) IGZO TFTs capable of reaching a benchmark speed of 1 GHz [4] , which are, to the best of our knowledge, the fastest oxide-based diodes and transistors to date; c) a few different methods to achieve IGZO TFTs capable of onevolt operations [5][6][7][8][9] ; d) CMOS-like oxide logic gates and functional circuits including inverters with a gain up to 150 [10,11] , NAND gate [12] , D-latch [13] , 51 stage ring oscillator [13] , complementary static random access memories [14] , and a one-bit full adder [13] , etc, by integrating SnO-based p-type TFTs with IGZO-based n-type TFTs; and finally e) novel oxide TFTs with a Schottky source contact that show no short channel effect, almost total immunity to negative bias illumination stress, and have a gain over two orders of magnitude higher than that of a typical silicon transistor [15] .…”

Section: Introductionmentioning

confidence: 99%

8.4: Invited Paper: Oxide devices for displays and low power electronics

Zhang

Cai

Wilson

et al. 2019

Symp Digest of Tech Papers

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Oxide semiconductors have been envisaged to find applications in flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences. However, there are still several bottlenecks to overcome in order to realise this goal, especially the lack of oxide‐semiconductor components fast enough for wireless communications, low power oxide transistors, and high‐performance p‐type oxide semiconductors for complementary circuits. Here we review our recent work to address these problems, including gigahertz operating IGZO Schottky diodes and TFTs, 1 V operating TFTs, complementary circuits using IGZO and SnO TFTs, and a novel TFT structure with unique performance.

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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Cited by 52 publications

References 24 publications

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

High‐Performance P‐Type Copper(I) Thiocyanate Thin Film Transistors Processed from Solution at Low Temperature

8.4: Invited Paper: Oxide devices for displays and low power electronics

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