Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

Spina, L. La; Marano, I.; d’Alessandro, V.; Schellevis, H.; Nanver, L.K.

doi:10.1109/esime.2008.4525061

Cited by 7 publications

(2 citation statements)

References 20 publications

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“…2. In the same picture, results obtained from thermal-only 3-D FEM simulations are also reported, which have been performed as explained in [16]. The values of the thermal resistances obtained by using the different methods, as well as by simulations, are shown for two different aspect ratios (AR) of the emitter area A E , where AR is defined as the ratio L/W, with L and W being the length and width of the emitter stripe, respectively (see Fig.…”

Section: B Thermal Resistance Extraction Techniquementioning

confidence: 88%

Thermal design of fully-isolated bipolar transistors

Russo

Spina

d’Alessandro

et al. 2008

2008 14th International Workshop on Thermal Inveatigation of ICs and Systems

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The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated devices. As a conclusion, plain guidelines are provided to optimize the thermal design.

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Section: B Thermal Resistance Extraction Techniquementioning

confidence: 88%

Thermal design of fully-isolated bipolar transistors

Russo

Spina

d’Alessandro

et al. 2008

2008 14th International Workshop on Thermal Inveatigation of ICs and Systems

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show abstract

“…It has been estimated here by comparing experimental results to simulations. For the latter, measurement of devices with a wide range of has been used as a basis to establish reliable thermal [43], [44] and electrothermal [9], [44]. For a higher accuracy, a more detailed description of the AlN coverage of the device surface topography as well as of the microscopic material properties is needed.…”

Section: B Aln Cooling Of Bjt Circuitsmentioning

confidence: 99%

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Nanver

Schellevis

Scholtes

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special 2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).

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Aluminum nitride for heatspreading in RF IC’s

Spina

Iborra

Schellevis

et al. 2008

Solid-State Electronics

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Keywords:Aluminum nitride Bipolar transistor Electrothermal phenomena Heatspreader Piezoelectric characteristics RF integration Thermal instabilities Thermal resistanceTo reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The A1N is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF ICs, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of A1N as thick as 4 urn are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

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Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

Cited by 7 publications

References 20 publications

Thermal design of fully-isolated bipolar transistors

Thermal design of fully-isolated bipolar transistors

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Aluminum nitride for heatspreading in RF IC’s

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