Aluminum monolayers on Si (111) for MBE-growth of GaN

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

“…Due to the tendency of SiN formation at the onset of the GaN growth, the silicon surface must be first aluminized. It was found that 1.3 monolayer (ML) Al deposition before the growth gave the smoothest GaN surface and highest GaN crystalline quality [12]. More than or equal to 1.3 ML Al provided a GaN layer with Ga-polarity, while less than 1.3 ML formed mixed or N-polar material.…”

Theoretical Study of Adsorption of Group IIIA Nitrides on Si(111)

“…1,2 Moreover, silicon is very interesting as a substrate because of the favorable physical properties, high quality, very low cost, and mature development for processing and large-scale production. 3 The epitaxial growth of group IIIA nitrides on Si surfaces is a promising route for large-scale, low-cost mass production of group IIIA nitride-based devices. 4 All the above make the study of group IIIA nitrides at Si surfaces very interesting and potentially useful.…”

“…The study of chemisorption of group IIIA metals and their nitrides at Si surfaces presents great interest because the group IIIΑ nitrides are very promising optoelectronic materials for many applications such as light-emitting diodes, laser diodes, and high-power and high-temperature electronic devices. , Moreover, silicon is very interesting as a substrate because of the favorable physical properties, high quality, very low cost, and mature development for processing and large-scale production . The epitaxial growth of group IIIA nitrides on Si surfaces is a promising route for large-scale, low-cost mass production of group IIIA nitride-based devices .…”

“…All the above make the study of group IIIA nitrides at Si surfaces very interesting and potentially useful. Subjects of particular interest are the geometric and electronic structure of chemisorbed group IIIA nitrides and the growth of their films on Si surface, BN, , AlN, ,, GaN, − ,− and InN. − …”

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

“…The effect of Al monolayers on the subsequent GaN layers was also investigated at low and high substrate temperatures of 450 and 640 ⁰C, respectively. At low temperatures, Al thickness below 1 monolayer provided the best and comparable GaN quality while more than 1 monolayer was required at high temperatures[141].Alternate to the process of Al predeposition for the nucleation of AlN, Karmann et al[142] tried nucleating AlN layers on the Si substrate by exposing it to nitrogen plasma.The process of intentional nitridation led to disorientation of the AlN crystals exhibiting wider values of XRD FWHM than that obtained without the nitridation step for similar growth parameters and thicknesses. On the contrary, it is interesting to note that the formation of crystalline α-Si 3 N 4 intentionally at the AlN and Si(111)interface reduced the lattice mismatch and transformed the stress in the AlN layers from tensile to compressive [143].…”