Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

Nast, Oliver; Puzzer, T.; Koschier, L.; Sproul, Alistair B.; Wenham, Stuart

doi:10.1063/1.122722

Cited by 323 publications

(191 citation statements)

References 13 publications

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“…Rech et al showed that ZnO:Al films prepared by magnetron sputtering and post deposition wet chemical etching demonstrate an effective light trapping and the textured surface reduces reflection losses at the ZnO:Al/Si-interface with excellent light scattering properties for silicon thin film solar cells and modules [3,4]. Grained polycrystalline silicon (poly-Si) films were prepared on nano-textured glass substrates by epitaxial thickening of seed layers formed by the aluminum-induced layer exchange (ALILE) process [5,6] for poly-Si thin film solar cell application with 8% efficiencies with improved material quality [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Okur

Yakuphanoğlu

Σταθάτος³

2010

Microelectronic Engineering

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a b s t r a c tWe have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO 2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO 2 as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm 2 /Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area.Crown

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Section: Introductionmentioning

confidence: 99%

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Okur

Yakuphanoğlu

Σταθάτος³

2010

Microelectronic Engineering

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“…[10][11][12][13][14][15] This AIC technique enables us to form large-grain (diameters: 10-100 lm) polycrystalline Si films at relativity low temperatures (420-550 C) through the exchange between the Al and Si layers during annealing. [10][11][12][13][14][15] Moreover, we controlled the orientations of the Al-induced-crystallized Si (AIC-Si) films to either (100) or (111) plane by modulating the annealing temperatures, the thickness of Al and Si layers, and the thickness of Al native oxide (AlO x ) interlayers between Si and Al layers. [13][14][15] CVD of Si layers onto the AIC-Si thin-film is a promising approach to fabricate the low-defect Si layers on glass substrates.…”

mentioning

confidence: 99%

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Toko

Kurosawa

Saitoh³

et al. 2012

Appl. Phys. Lett.

144

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Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties J. Appl. Phys. 112, 084103 (2012) Method for investigating threshold field of charge injection at electrode/dielectric interfaces by space charge observation Appl. Phys. Lett. 101, 172902 (2012) An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation J. Appl. Phys. 112, 083707 (2012) Electron transport properties of carbon nanotube-graphene contacts Appl. Phys. Lett. 101, 153501 (2012) Response to "Comment on 'Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses'" [J. Appl. Phys. 112, 076101 (2012) (111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 C) and the native-oxidized Al (AlO x ) diffusioncontrol layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices. V C 2012 American Institute of Physics. [http://dx

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“…An attractive method to prepare such large-grained seed layers is the aluminum-induced layer exchange ͑ALILE͒. [4][5][6][7] The ALILE process is a special form of aluminum-induced crystallization. A substrate/Al/ a-Si stack is transformed into a substrate/poly-Si/ Al͑+Si͒ stack by a simple annealing step below the eutectic temperature of the Al/ Si system ͑577°C͒.…”

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confidence: 99%

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Lee

Becker

Muske

et al. 2007

Applied Physics Letters

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The crystallization of thin silicon films at temperatures between 425 and 600°C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deterioration. The resistivity was even found to drop from 4.3×10−4Ωcm for the as deposited ZnO:Al to 2.2×10−4Ωcm in the case of aluminium induced crystallization and to 3.4×10−4Ωcm for solid phase crystallization. The temperature-stable conductivity of ZnO:Al films coated with Si opens up appealing options for the production of polycrystalline silicon thin-film solar cells with transparent front contacts.

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Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

Cited by 323 publications

References 13 publications

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

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