Aluminum incorporation in -layers and implications for growth optimization

Rossów, U.; Fuhrmann, D.; Litte, T.; Retzlaff, T.; Hoffmann, Lars; Bremers, Heiko; Hangleiter, A.

doi:10.1016/j.jcrysgro.2006.10.143

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2008

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Cited by 2 publications

(3 citation statements)

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“…This is a hint for stable growth conditions leading to highly reproducible results. Additionally, the independence of Al incorporation on the used atmosphere composition which has been already reported before [9] could also be confirmed.…”

Section: Article In Presssupporting

confidence: 78%

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Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE

Dartsch¹,

Figge²,

Aschenbrenner³

et al. 2008

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 78%

“…It is reported that the composition of the reactor atmosphere has an effect on the growth mechanism of GaN and AlGaN [8,9]. In order to achieve better optical performance of our mirror structures this parameter has been varied to enhance the structural and/or interface quality.…”

Section: Article In Pressmentioning

confidence: 99%

Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE

Dartsch¹,

Figge²,

Aschenbrenner³

et al. 2008

Journal of Crystal Growth

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“…pressure metal-organic vapor phase epitaxy (MOVPE) (Aixtron AIX 200RF) in an horizontal reactor with standard precursors. Details can be found in [5,6].…”

mentioning

confidence: 99%

Investigations of deep lying wide bandgap GaN and InGaN quantum well structures: A challenge for ellipsometric methods

Rossów

Fuhrmann

Jönen

et al. 2008

Phys. Status Solidi (c)

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In this contribution we address the problems in characterizing typical group‐III‐nitride QW structures used in LED or laser applications by spectroscopic ellipsometry. Since the buffer layers are transparent in the visible and near UV and the whole layer stack is a few microns thick, the contributions of the nanometer thick QWs to the signal is very small and with ellipsometers with typical resolution in the polarization states hardly to detect. We discuss this in detail for two typical structures – Al‐GaN/GaN and InGaN/GaN – and quantify how the resolution must be improved to overcome this experimental limitation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Aluminum incorporation in -layers and implications for growth optimization

Cited by 2 publications

References 14 publications

Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE

Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE

Investigations of deep lying wide bandgap GaN and InGaN quantum well structures: A challenge for ellipsometric methods

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