Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices

Saarenpää, Hanna; Niemi, Tapio; Tukiainen, Antti; Lemmetyinen, Helge; Tkachenko, Nikolai V.

doi:10.1016/j.solmat.2010.04.006

Cited by 80 publications

(32 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Small molecule devices based on this material showed increased stability with no degradation observed after 40 days. [182] In inverted type devices a thin evaporated layer of aluminum later oxidized to aluminum oxide between the ITO cathode and the PEDOT:PSS layer have been used to enhance electron extraction and in conjunction with a MoO 3 anode interface layer to increase stability. [183] Zimmermann et al investigated the use of thin evaporated chromium and titanium metal interfaces between the active layer and an aluminum anode.…”

Section: Effect Of the Atmospherementioning

confidence: 99%

Stability of Polymer Solar Cells

et al. 2011

View full text Add to dashboard Cite

Organic photovoltaics (OPVs) evolve in an exponential manner in the two key areas of efficiency and stability. The power conversion efficiency (PCE) has in the last decade been increased by almost a factor of ten approaching 10%. A main concern has been the stability that was previously measured in minutes, but can now, in favorable circumstances, exceed many thousands of hours. This astonishing achievement is the subject of this article, which reviews the developments in stability/degradation of OPVs in the last five years. This progress has been gained by several developments, such as inverted device structures of the bulk heterojunction geometry device, which allows for more stable metal electrodes, the choice of more photostable active materials, the introduction of interfacial layers, and roll-to-roll fabrication, which promises fast and cheap production methods while creating its own challenges in terms of stability.

show abstract

Section: Effect Of the Atmospherementioning

confidence: 99%

Stability of Polymer Solar Cells

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Similar to that of ITO, some extrinsic dopants, such as Al and Ga, are added into the ZnO films to improve the film conductivity by introducing ionic impurities. 33,45,89 Hence, these Al-doped ZnO (AZO) 33,90,91 and Ga-doped ZnO (GZO) 21,92 films show comparable optical transparency and electrical conductivity as the ITO layers and have been developed as TEs in optoelectronic devices. AZO and GZO have a work function range of 4.0 to 5.0 eV depending on the surface treatments.…”

Section: Transparent Conductive Oxidesmentioning

confidence: 99%

Transparent electrodes for organic optoelectronic devices: a review

et al. 2014

View full text Add to dashboard Cite

Abstract. Transparent conductive electrodes are one of the essential components for organic optoelectronic devices, including photovoltaic cells and light-emitting diodes. Indium-tin oxide (ITO) is the most common transparent electrode in these devices due to its excellent optical and electrical properties. However, the manufacturing of ITO film requires precious raw materials and expensive processes, which limits their compatibility with mass production of large-area, low-cost devices. The optical/electrical properties of ITO are strongly dependent on the deposition processes and treatment conditions, whereas its brittleness and the potential damage to underlying films during deposition also present challenges for its use in flexible devices. Recently, several other transparent conductive materials, which have various degrees of success relative to commercial applications have been developed to address these issues. Starting from the basic properties of ITO and the effect of various ITO surface modification methods, here we review four different groups of materials, doped metal oxides, thin metals, conducting polymers, and nanomaterials (including carbon nanotubes, graphene, and metal nanowires), that have been reported as transparent electrodes in organic optoelectronic materials. Particular emphasis is given to their optical/electrical and other material properties, deposition techniques, and applications in organic optoelectronic devices.

show abstract

“…The angle of incidence used was 0.6 , which was an optimized value to avoid reflection and the substrate peaks. 12,[15][16][17][18] The intensity of the peaks however improved as the growth temperature was increased. No trace of impurity peaks were observed even in the logarithmic scale.…”

Section: Surface Morphology and Crystallinitymentioning

confidence: 99%

“…8 For these reasons, AZO can be a cost effective alternative to ITO in applications such as transparent electrodes for solar cells, flat panel displays, LCD electrodes, touch panel transparent contacts, and IR windows. [12][13][14][15][16][17][18] Dasgupta et al (Ref.12) have given an account of resistivity as a function of grain orientation. However, in recent years, zinc oxide and AZO have also been grown using atomic layer deposition (ALD) systems.…”

Section: Introductionmentioning

confidence: 99%

Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition

Dhakal

Vanhart

Christian

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The authors report electrical and optical characterization of zinc oxide (ZnO) and Al-doped zinc oxide (AZO) films grown by atomic layer deposition (ALD). A detailed analysis of ZnO growth morphology is presented with the help of atomic force microscopy imaging, roughness analysis, and x-ray photoelectron spectroscopy surface chemistry information. Initially the film grew as islands, which coalesced to complete the substrate coverage at 50 ALD cycles. The AZO films to be used as transparent conducting oxides for solar cell applications were grown on single crystalline Si (100) and float-glass substrates at temperatures from 150–325 °C. The amount of aluminum doping was varied from 2 to 8 %. The AZO film with 5% Al exhibited the highest conductivity in the film, which increased as the growth temperature increased. Hall effect measurements of an AZO film of thickness 575 nm doped at 5% on silicon and glass substrates showed a sheet resistance (Rs) of 100 Ω/□, which improved further to 25 Ω/□ after annealing at higher temperatures in an argon-hydrogen environment. The transmittance and reflectance of the films grown on glass substrates were used to calculate the band gap. The band gap of AZO increased with Al-doping level. The transmittance of the films in the entire 0 to 8 % doping range, was found to be 80 to 90 % in the visible region. In addition, the growth rates of ZnO, Al2O3, and AZO films were also studied. The growth rate of the AZO films was 1.95 Å per ALD cycle with a cycle time of 1 s. This growth rate is relatively large for an ALD process. The interface of the AZO-Al2O3-Si(100) imaged using high resolution transmission electron microscopy showed a random texture and a continuous interface.

show abstract

Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices

Cited by 80 publications

References 34 publications

Stability of Polymer Solar Cells

Stability of Polymer Solar Cells

Transparent electrodes for organic optoelectronic devices: a review

Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition

Contact Info

Product

Resources

About