2014
DOI: 10.1007/s10854-014-1853-y
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Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer

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Cited by 5 publications
(6 citation statements)
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“…Similar to our previous studies, the absence of pyrochlore phase in Fig. 1 indicated that the PLZT thin films fabricated by the CSD method had polycrystalline perovskite structure (Takada et al [34]). However, polycrystalline PLZT thin films sometimes include a lot of peaks ascribed to possible pyrochlore phase, e. g. 2h = 31 and 528, we then examined the surface morphologies of the PLZT thin films in order to check for the presence of pyrochlore phase.…”
Section: Methodssupporting
confidence: 89%
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“…Similar to our previous studies, the absence of pyrochlore phase in Fig. 1 indicated that the PLZT thin films fabricated by the CSD method had polycrystalline perovskite structure (Takada et al [34]). However, polycrystalline PLZT thin films sometimes include a lot of peaks ascribed to possible pyrochlore phase, e. g. 2h = 31 and 528, we then examined the surface morphologies of the PLZT thin films in order to check for the presence of pyrochlore phase.…”
Section: Methodssupporting
confidence: 89%
“…These steps were repeated three times to form a 500-nm-thick PLZT film. After the final calcination, the PLZT film was crystallized by RTA at 750 8C in air for 10 min [30,33,34]. The AZO (ZnO : Al 2 O 3 = 98.5 : 1.5 wt.%) and ITO (In 2 O 3 :SnO 2 = 95.0 : 5.0 wt.%) top electrodes (150-nm-thick) were deposited on the PLZT films using PLD with a 50*500-lm-diameter shadow mask (SUS304) under the conditions listed in Table 1.…”
Section: Methodsmentioning
confidence: 99%
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“…Accompany with the studies on fatigue mechanism, much effort have been done to pursuit fatigue-free devices with ferroelectric thin films, which almost have been achieved by SBT-based capacitors [455,467], PZT or PLZT thin films with oxide electrodes [468,469], Bi 4 Ti 3 O 12 -based films capacitors [470,471], as well as buffer layer or ion doping modified BFO film capacitors [472,473], etc. , generally with fatigue-free behaviors up to 10 10 switching cycles.…”
Section: Important Phenomena In Ferroelectric Thin Filmsmentioning
confidence: 99%
“…A solution was spin-coated onto the Pt substrate to form capacitor structures. Details of the fabrication process have been reported previously [9][10][11].…”
mentioning
confidence: 99%