Aluminium nitride thin films and their properties

Winsztal, S.; Wnuk, B.; Majewska-Minor, H.; Niemyski, T.

doi:10.1016/0040-6090(76)90307-2

Cited by 17 publications

(2 citation statements)

References 5 publications

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“…It is well known that AlN has a hexagonal (wurtzite) structure and two kinds of cubic structure (rock salt and zinc-blend). Hexagonal AlN (h-AlN) is more common and stable at ambient conditions, and it can be fabricated easily by many methods: as powders (Ref [6][7][8], sintered compacts (Ref [9][10][11][12], and thin films (Ref [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Cubic Aluminum Nitride Coating Through Atmospheric Reactive Plasma Nitriding

et al. 2010

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Aluminum nitride is a promising material for structural and functional applications. Cubic AlN (c-AlN) is expected to have higher thermal conductivity due to their high symmetry; however, its fabrication is difficult. In this study, c-AlN was synthesized by atmospheric plasma spray process through the reaction between Al feedstock powder and nitrogen plasma. Al powders were supplied to the plasma stream by Ar carrier gas and reacted with surrounding N 2 plasma, then deposit onto substrate. The obtained coatings were c-AlN/Al mixture at 150 mm of spray distance, and the nitride content was improved by increasing the spray distance. The coatings almost consist of c-AlN at 300 mm of spray distance. The coatings thickness decreased from 100 to 10 lm with increasing spray distance from 150 to 300 mm. Using carrier gas, N 2 enable to fabricate thick c-AlN coating with hardness 1020 Hv.

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Section: Introductionmentioning

confidence: 99%

Cubic Aluminum Nitride Coating Through Atmospheric Reactive Plasma Nitriding

et al. 2010

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“…For examples; heat sinks, hybrid substrates, semiconductor packages, crucibles and vessels for handling corrosive chemicals and molten metals, parts of semiconductor equipment, reaction vessels of etching and surface acoustic wave devices etc. [1][2][3][4] So far, there are many studies about fabrication of AlN thin films, [5][6][7][8] powder [9][10][11][12] and sintered compacts. [13][14][15][16] If the thermal sprayed AlN coatings are fabricated, on the other hand, cost-effective solutions become available for a number of applications.…”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate Materials upon Fabrication of Aluminum Nitride Coatings by Reactive RF Plasma Spraying

et al. 2006

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Influence of the substrate materials upon fabrication of aluminum nitride (AlN) coatings by reactive RF plasma spraying was investigated according to spraying onto various substrate materials. Aluminum particles were injected into Ar/N 2 plasma and were deposited onto carbon steel (S45C), aluminum alloy (A6063) and quartz substrates. In the case of using carbon steel substrate, fabrication of thick and dense Al based Al/AlN composite coatings was possible. However, higher concentration of AlN phase in the coatings peeled off the coatings during cool down after spraying due to the difference in thermal expansion coefficient between AlN and carbon steel. Therefore, formation of Al interlayer was attempted between AlN layer and carbon steel substrate in order to decrease the thermal stress. As the result, Al interlayer included Al/AlN composite coating was fabricated onto a carbon steel substrate with control the N 2 flow rate in plasma gas during spraying. While fabrication of AlN layer onto Al interlayer was possible, it was concerned that formation of Fe-Al intermetallic compound at the interface between the coating and the substrate formed defects. Then not the Al interlayer but aluminum alloy was used as the substrate. However, the aluminum alloy substrate melted during spraying even the substrate was cooled by water-cooled substrate holder. Therefore, it is demanded to the substrate materials have a melting point that is much higher than aluminum. On the other hand, almost completely AlN coatings were fabricated using quartz substrate, which involves lower thermal expansion coefficient and higher melting point. Therefore, the characteristics of low thermal expansion coefficient and high melting point were required for substrate materials in order to fabricate AlN or AlN based Al/AlN composite coatings by reactive RF plasma spraying. Especially, quartz was useful for the substrate material.

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Growth and Growth Methods for Nitride Semiconductors

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Aluminium nitride thin films and their properties

Cited by 17 publications

References 5 publications

Cubic Aluminum Nitride Coating Through Atmospheric Reactive Plasma Nitriding

Cubic Aluminum Nitride Coating Through Atmospheric Reactive Plasma Nitriding

Influence of Substrate Materials upon Fabrication of Aluminum Nitride Coatings by Reactive RF Plasma Spraying

Growth and Growth Methods for Nitride Semiconductors

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