2016
DOI: 10.1021/acs.nanolett.6b04065
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Alternative Route to Silicene Synthesis via Surface Reconstruction on h-MoSi2 Crystallites

Abstract: Silicene is a two-dimensional material with a Dirac-type band structure and it is particularly attractive due to its potential for integration with Si-based technology. The primary focus has been to grow single silicene layers and understand how the electronic structure is affected by the substrate and the phase transition between low- and high-buckling configurations. Typically, silicene is synthesized by depositing monolayer amounts of silicon onto a heated Ag(111) surface; however, other growth substrates s… Show more

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Cited by 40 publications
(15 citation statements)
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References 46 publications
(73 reference statements)
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“…In a later study, MoSi 2 clusters were grown on Si using the same method. 16 These MoSi 2 clusters also exhibit a honeycomb lattice which the authors attributed to be a silicene layer. 16 Similar to the Ge 2 Pt system, the role of the clusters as substrate was still not addressed.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In a later study, MoSi 2 clusters were grown on Si using the same method. 16 These MoSi 2 clusters also exhibit a honeycomb lattice which the authors attributed to be a silicene layer. 16 Similar to the Ge 2 Pt system, the role of the clusters as substrate was still not addressed.…”
Section: Introductionmentioning
confidence: 99%
“…16 These MoSi 2 clusters also exhibit a honeycomb lattice which the authors attributed to be a silicene layer. 16 Similar to the Ge 2 Pt system, the role of the clusters as substrate was still not addressed. In both studies, the focus was on flat clusters, as small height variations are more suitable for scanning tunneling microscopy (STM) study.…”
Section: Introductionmentioning
confidence: 99%
“…The successful growth of germanene via segregation indicates that the deposition of thin metal films on semiconductors is an effective way to grow ME2DMs. Another example is the segregation of silicene by annealing, through which thin Mo layers were deposited on a Si(100) surface at 923 K. [ 131 ]…”
Section: Epitaxial Growth Of Me2dmsmentioning
confidence: 99%
“…Transition‐metal disilicides (TMSi 2 ) as high‐temperature ceramic materials have received widespread attention because of their moderate density, thermal stability, excellent strength, good oxidation, and creep resistance, which can endow them with variety of applications in high‐temperature devices, such as industrial gas burners, thermal barrier coating, and advanced aerospace turbine blades, etc . The structural stability and mechanical properties of TMSi 2 are of primary importance, since they are the foundation of application.…”
Section: Introductionmentioning
confidence: 99%