Alternative metals for advanced interconnects

Adelmann, Christoph; Wen, Liang; Peter, A.; Siew, Yong Kong; Croes, Kristof; Swerts, Johan; Popovici, Mihaela; Sankaran, Kiroubanand; Pourtois, Geoffrey; Elshocht, Sven Van; Bömmels, J.; Tőkei, Zsolt

doi:10.1109/iitc.2014.6831863

Cited by 79 publications

(53 citation statements)

References 3 publications

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“…The interaction of metals with quantum materials, including layered materials or layered heterostructures, is important for applications. For example, metals and particularly Cu would naturally serve as interconnects or heat sinks in electronic devices based on these materials [1]. As another example, intercalated metals can serve to modify the properties of layered materials, such as transport [2] or magnetism [3].…”

Section: Introductionmentioning

confidence: 99%

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

Han

Tringides

Evans

et al. 2020

Phys. Rev. Research

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Study of the adsorption of a transition metal on the surface of a layered material and the possible subsequent intercalation into that layered material is of fundamental interest and potential technological importance. In the present work, we choose the transition metal Cu as the adsorbate or intercalant and 2H-MoS 2 as the layered material. Energetics are calculated characterizing four of the most basic surface and interfacial phenomena: adsorption, intercalation, diffusion, and adhesion. Using first-principles density functional theory (DFT), we find that intercalating a Cu atom into the van der Waals (vdW) gap below the MoS 2 (0001) surface is 0.665 eV more favorable than adsorbing the Cu atom on top of the surface, i.e., intercalation of single Cu atoms is strongly favored thermodynamically. Also, we find that the system with adsorbed Cu is magnetic, while the system becomes nonmagnetic after the Cu atom is intercalated into the vdW gap. We obtain the diffusion barriers of the Cu atom on the surface and in the vdW gap to be 0.23 and 0.32 eV, respectively. We also obtain an adhesion energy of 0.874 J/m 2 for a Cu (111) slab bonding with a 2H-MoS 2 (0001) slab. The DFT value of adhesion energy, as well as the gap width at the interface between the Cu and MoS 2 , depends strongly on the choice of the functional. From our analysis on bulk properties of both MoS 2 and Cu, we suggest that our vdW-DF2-B86R results listed above are reliable for applications, e.g., interpretation of experimental results and physical modeling of this adsorption system.

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Section: Introductionmentioning

confidence: 99%

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

Han

Tringides

Evans

et al. 2020

Phys. Rev. Research

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“…Therefore, the interconnect performance has become a key constraint for the overall circuit performance, limiting further progress in circuit miniaturization [2,10,11]. To mitigate this effect, alternatives to Cu as conductor materials have been researched with increasing intensity for several years [11][12][13][14]. Ideal alternative metals show a much weaker thickness dependence of the resistivity than Cu and allow for reliable operation without the need for barrier and liner layers.…”

Section: Introductionmentioning

confidence: 99%

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Adelmann

2019

Solid-State Electronics

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Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, i.e. the substitution of the interconnect wire TCR by the bulk TCR becomes doubtful when the resistivity of the conductor metal is strongly increased by finite size effects. Semiclassical calculations for thin films show that the TCR deviates from bulk values when the surface roughness scattering contribution to the total resistivity becomes significant with respect to grain boundary scattering, an effect that might become even more important in nanowires due to their larger surface-to-volume ration. In addition, the TCR method is redeveloped to account for line width roughness. It is shown that for rough wires, the TCR method yields the harmonic average of the cross-sectional area as well as, to first order, the accurate value of the resistivity at the extracted area. Finally, the effect of a conductive barrier or liner layer on the TCR method is discussed. It is shown that the liner or barrier parallel conductance can only be neglected when it is lower than about 5 to 10% of the total conductance. It is furthermore shown that neglecting the liner/barrier parallel conductance leads mainly to an overestimation of the cross-sectional area of the center conductor whereas its resistivity is less affected.

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“…File list (2) download file view on ChemRxiv MoLigandPaper.pdf (0.97 MiB) download file view on ChemRxiv MoLigand_SI.pdf (6.66 MiB)…”

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confidence: 99%

Ligand-Assisted Volatilization and Thermal Stability of Bis(imido)dichloromolybdenum(VI) ([(t-BuN═)₂MoCl₂]₂) and Its Adducts

2019

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Volatile molybdenum containing compounds have successfully been utilized for the atomic layer deposition of MoNx, MoO3, MoS2, and MoCxNy. Most of the reported volatile molybdenum containing compounds have been prepared via salt metathesis reactions of bis(tert-butylimido)dichloromolybdenum(VI), with anionic nitrogen based ligands. Herein we describe the preparation of several adducts of [(t-BuN=)2MoCl2]2 (2) via ligand exchange reactions with various neutral ligands, including both mono-and bidentate ethers, amines, and phosphines, as well as an Nheterocyclic carbene (NHC). These compounds have been characterized using NMR spectroscopy, elemental analysis, and the solid-state structures have been determined using single crystal X-ray crystallography. The volatility and thermal stability of all compounds have been assessed using TGA and DSC, showing that the coordinated ligands can improve the volatility, but in many cases the gas phase species reverts to 2. This highlights a strategy for using coordinative ligands that are easily thermolyzed during evaporation and delivery yet improve the volatility of a key precursor.

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Alternative metals for advanced interconnects

Cited by 79 publications

References 3 publications

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Ligand-Assisted Volatilization and Thermal Stability of Bis(imido)dichloromolybdenum(VI) ([(t-BuN═)₂MoCl₂]₂) and Its Adducts

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Alternative metals for advanced interconnects

Cited by 79 publications

References 3 publications

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

Adsorption, intercalation, diffusion, and adhesion of Cu at the 2H−MoS2 (0001) surface from first-principles calculations

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Ligand-Assisted Volatilization and Thermal Stability of Bis(imido)dichloromolybdenum(VI) ([(t-BuN═)2MoCl2]2) and Its Adducts

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Product

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Ligand-Assisted Volatilization and Thermal Stability of Bis(imido)dichloromolybdenum(VI) ([(t-BuN═)₂MoCl₂]₂) and Its Adducts