Alternative Catalysts For Si-Technology Compatible Growth Of Si Nanowires

Iacopi, Francesca; Vereecken, Philippe; Schaekers, Marc; Caymax, Matty; Moelans, Nele; Blanpain, Bart; Detavernier, Christophe; D’Haen, Jan; Griffiths, Hefin

doi:10.1557/proc-1017-dd01-10-ee01-10

Cited by 7 publications

(13 citation statements)

References 20 publications

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“…7 The high resolution spectrum of In 3d (Fig. 4c) The key difference between this study and previous metal catalyst-free approaches is that Ge NW growth is uniquely 15 facilitated by the vapor phase of the organic solvent growth medium, with no material formation in solution.…”

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confidence: 79%

“…4 While this route has been widely adopted in the controlled synthesis of NWs, its viability for device applications has been limited due to 35 inherent Au contamination of the resultant nanostructures, 5 prompting interest in the use of alternative metal catalysts. 6,7 Concurrently, the more recent discovery of routes to Ge NWs grown without metal catalyst particles deemed as 'unseeded' or 'self-seeded' processes offer even higher purity NW 40 formation. 8 Ge et al showed that anisotropic growth of crystalline Ge nanostructures was possible in organic solution.…”

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confidence: 99%

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Perpendicular growth of catalyst-free germanium nanowire arrays

et al. 2011

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5High yields of single-crystalline Ge nanowires (NWs) were synthesized through the thermal decomposition of diphenylgermane (DPG) in the vapor phase of a high boiling point organic solvent. The NWs were single crystal and ranged from 7 to 15 nm and 0.5-10 µm in diameter and length 10 respectively. Catalyst-free growth only occured in areas exposed to the organic vapor, with no growth occurring in the liquid phase. NW growth was fully localizable to surfaces heated within a critical nucleation temperature range. High density, perpendicular arrays of Ge NWs were subsequently grown from 15 ITO coated substrates. This approach represents a viable and convenient route toward orientated arrays of catalyst-free Ge NWs for high-performance device applications.

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confidence: 79%

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confidence: 99%

Perpendicular growth of catalyst-free germanium nanowire arrays

et al. 2011

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“…Thus the growth temperature has to be higher than the eutectic temperature of 577 o C so that the Al-Si catalyst particle is a liquid [21,24].…”

Section: Morphologymentioning

confidence: 99%

“…Iacopi et al [24] used 10 nm Al particles prepared via PVD method to grow SiNWs by the PECVD. They found that Si layer that covered the catalyst is amorphous.…”

Section: Crystalline Structurementioning

confidence: 99%

Preparation and characterization of silicon nanowires catalyzed by aluminum

Al-Taay

Mahdi

Parlevliet

et al. 2013

Physica E: Low-dimensional Systems and Nanostructures

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractSilicon nanowires (SiNWs) were grown on indium tin oxide coated glass substrates by a pulsed plasma-enhanced chemical vapor deposition (PPECVD) method using aluminum as a catalyst. The thin films of the catalyst, with thicknesses ranging from 10 nm to 100 nm, were deposited on the substrates by thermal evaporation. The effect of the thickness of the thin film catalyst on the morphology of the silicon nanowires was investigated. The surface morphology study of the prepared wires showed that the modal wire diameter increased as the catalyst film thickness increased. The X-ray diffraction patterns of the prepared silicon nanowires had no silicon peaks, indicating that the wires had low crystallinity. The photoluminescence spectra of the SiNWs showed that all samples had more than one emission band. The emission band location and shape were found to be dependent on catalyst thickness. The Raman spectra of the prepared nanowires showed that the first order transverse band shifted toward lower frequencies compared with the c-Si band location.

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“…An alternative approach is represented by Plasma-Enhanced Chemical Vapor Deposition (PECVD), a powerful method allowing depositing semiconductor thin films from a gas phase precursor at sample temperatures lower than in CVD [14,15]. PECVD indeed proved successful for NW growth at a relatively fast rate often below the eutectic point of the different catalysts used (e.g., Au [14][15][16]; Al [17]; Ga or In [16][17][18]). However, PECVD leads to the formation of mixed amorphous/crystalline structures, making the separation of the deposition by-products from NWs difficult [19].…”

Section: Introductionmentioning

confidence: 99%

Silicon nanowires to detect electric signals from living cells

Piedimonte

Mazzetta

Fucile

et al. 2019

Mater. Res. Express

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The ability to merge electronic devices with biological systems at the cellular scale is an interesting perspective. Potential applications span from investigating the bio-electric signals in excitable (and non-excitable) cells with an insofar-unreached resolution to plan next-generation therapeutic devices. Semiconductor nanowires (NWs) are well suited for achieving this goal because of their intrinsic size and wide range of possible configurations. However, production of such nanoscale electrodes is pricey, time-consuming and affected by poor compatibility with the Complementary Metal-Oxide-Semiconductor integrated circuits (CMOS-IC) process standards. To take a step forward, we introduced a new method to fabricate small, high-density Silicon NWs (SiNWs) with a fast, relatively inexpensive and low-temperature (200 °C) process. Growth of such SiNWs is compatible with CMOS-IC standards, thus theoretically allowing on-site amplification of bioelectric signals from living cells in tight contact. Here, we report our preliminary data showing the biocompatibility of such SiNWs, as a necessary step to produce a compact device providing super-resolved descriptions of bioelectric waveforms captured from the subcellular to the network level.

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Alternative Catalysts For Si-Technology Compatible Growth Of Si Nanowires

Cited by 7 publications

References 20 publications

Perpendicular growth of catalyst-free germanium nanowire arrays

Perpendicular growth of catalyst-free germanium nanowire arrays

Preparation and characterization of silicon nanowires catalyzed by aluminum

Silicon nanowires to detect electric signals from living cells

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