Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results

Griesinger, Uwe A.; Dettmann, Wolfgang; Hennig, Mario; Heumann, Jan; Koehle, Roderick; Ludwig, R.; Verbeek, Martin; Zarrabian, Mardjan

doi:10.1117/12.476982

Search citation statements

Order By: Relevance

Paper Sections

Select...

Phase Shifting Mask Design and Analysis1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2002

2006

Publication Types

Select...

Other4

Book1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the literature, techniques such as lateral bias correction, isotropic under-etch, and dual trench have been proposed to correct unbalanced intensity between shifted and un-shifted space on 193-nm and 248-nm masks [4][5][6][7]. New method such as sidewall chrome alternating aperture mask (SCAAM) is proposed to solve this problem [8].…”

Section: Phase Shifting Mask Design and Analysismentioning

confidence: 98%

157-nm alternating phase-shifting mask design and high-NA images

Chen

Meute²,

Dean³

et al. 2003

SPIE Proceedings

View full text Add to dashboard Cite

This report is the second series of 157nm alternating phase shifting mask done at ISMT. In this report, we present a comprehensive study of balancing aerial image through various feature sizes and pitches. New results of resist images are analyzed from a 157-nm alternating PSM with a 0.85 NA lens. The mask is made by dual trench technique with a phase-etch of 115nm and an isotropic under-etch of 90nm based on optimized simulation results. With this dual trenched mask, the wafer printing images show tremendous improvement on "line paring" phenomena. We also present more detailed study on abnormal CD variation across line array observed during this investigation. The results from this work give an initial assessment of 157-nm capability of alternating PSM and 157-nm resist imaging quality.

show abstract